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BLD132D(TO-92)

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size98KB,4 Pages
ManufacturerShenzhen SI Semiconductors Co., Ltd.
Download Datasheet Parametric View All

BLD132D(TO-92) Overview

Transistor

BLD132D(TO-92) Parametric

Parameter NameAttribute value
MakerShenzhen SI Semiconductors Co., Ltd.
package instruction,
Reach Compliance Codeunknown
Shenzhen SI Semiconductors Co., LTD.
Product Specification
D
:
FEATURES
/ D SERIES TRANSISTORS
RoHS
BLD132D
HIGH VOLTAGE CAPABILITY
HIGH SPEED SWITCHING
WIDE SOA
RoHS COMPLIANT
FLUORESCENT LAMP
TO-92/TO-92S
VALUE
600
400
9
2
15
150
-65-150
UNIT
V
V
V
A
W
°C
°C
:
APPLICATIONS:
ELECTRONIC BALLAST
Tc=25°C
°
Absolute Maximum Ratings Tc=25°C
°
SYMBOL
-
Collector-Base Voltage
-
Collector-Emitter Voltage
-
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Tc=25°C
°
Electrical Characteristics
CHARACTERISTICS
-
Collector-Cutoff Current
-
Collector-Cutoff Current
-
Collector-Emitter Voltage
-
Emitter-Base Voltage
Tc=25°C
°
SYMBOL
I
CBO
I
CEO
V
CEO
V
EBO
TEST CONDITION
V
CB
=600V
V
CE
=400V,I
B
=0
I
C
=10mA,I
B
=0
I
E
=1mA,I
C
=0
I
C
=200mA,I
B
=20mA
400
9
0.3
0.4
0.9
1.2
7
10
5
1.5
3.0
0.8
2.0
V
µs
40
V
V
MIN
MAX
10
30
UNIT
µA
µA
V
V
-
Collector-Emitter Saturation Voltage
-
Base-Emitter Saturation Voltage
Vcesat
I
C
=0.5A,I
B
=0.1A
I
C
=1.5A,I
B
=0.5A
Vbesat
Ic=0.5A,Ib=0.1A
V
CE
=5V,I
C
=1mA
DC Current Gain
h
FE
V
CE
=5V,I
C
=0.2A
V
CE
=5V,I
C
=2.0A
Storage Time
Falling Time
Diode Forward Voltage
t
S
t
f
V
F
V
CC
=5V,I
C
=0.25A
(UI9600)
I
F
=0.8A
1
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