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ERA12-10

Description
0.5 A, 200 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size2MB,2 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
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ERA12-10 Overview

0.5 A, 200 V, SILICON, SIGNAL DIODE

ERA12-02 THRU ERA22-10
FAST RECOVERY DIODE
200V-1000V 0.5A
FEATURES
Ultra small package, possible for 5mm pitch automatic
insertion
High voltage by mesa design
High reliability
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Average forward current
Surge current
Operating junction temperature
Storage temperature
Symbol
V
RRM
I
F(AV)
I
FSM
T
j
T
stg
Resistive load (Ta=40°C)
Sine wave 10ms
Conditions
Rating
-02 -04 -06 -08 -10
200 400 600 800 1000
0.5
10
-40 to +140
-40 to +140
Unit
V
A
A
°C
°C
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Reverse recovery time
Symbol
V
FM
I
RRM
t
rr
Conditions
I
FM
=0.5A
V
R
=V
RRM
I
F
=0.1A, I
R
=0.1A
Max.
1.5
10
0.4
Unit
V
µA
µs
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

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