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BLU20

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size14KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

BLU20 Overview

Transistor

BLU20 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)4 A
ConfigurationSingle
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)65 W
surface mountNO
BLU20/12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLU20/12
is Designed for
Class C, FM Land Mobile Applications
up to 470 MHz.
FEATURES:
Internal Input Matching Network
P
G
= 6.5 dB at 20 W/470 MHz
Omnigold™
Metalization System
PACKAGE STYLE .500 6L FLG
C
A
2x ØN
FU LL R
D
B
E
.725/18,42
F
K
M
L
M AX IM U M
inche s / m m
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
4.0 A
36 V
16 V
4.0 V
38 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
4.6 °C/W
D IM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
G
H
M IN IM U M
inche s / m m
J
I
.150 / 3.43
.045 / 1.14
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.125 / 3.18
.725 / 18.42
.970 / 24.64
.090 / 2.29
.150 / 3.81
.120 / 3.05
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CES
h
FE
C
OB
P
G
η
C
I
C
= 50 mA
I
C
= 25 mA
I
E
= 5.0 mA
V
CE
= 20 V
V
CE
= 10 V
T
C
= 25 °C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
16
36
4.0
12
UNITS
V
V
V
mA
---
pF
dB
%
I
C
= 2.7 A
f = 1.0 MHz
P
OUT
= 20 W
f = 470 MHz
15
53
6.5
55
60
V
CB
= 12.5 V
V
CC
= 12.5 V
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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