ERB38-04 THRU ERB38-06
HIGH EFFICIENCY RECTIFIER
400V-600V 0.8A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC DO-41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces ,0.34 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ERB38 - 04
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
Peak forw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
@T
J
=125
@T
A
=75
ERB38 - 05
500
350
500
0.8
ERB38 - 06
600
420
600
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
400
280
400
I
FSM
20.0
A
Maximum instantaneous forw ard voltage
@ 0.8A
Maximum reverse current
@T
A
=25
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
20
2.5
5.0
50.0
50
15
60
- 55 ----- + 150
- 55 ----- + 150
V
Ａ
ns
pF
/W
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
E-mail: sales@taychipst.com
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Web Site: www.taychipst.com
ERB38-04 THRU ERB38-06
HIGH EFFICIENCY RECTIFIER
400V-600V 0.8A
ERB38-04 THRU ERB38-06
RATINGS AND CHARACTERISTIC CURVES
FIG.1--TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
t
rr
+0.5A
(+)
PU
LSE
G ER R
EN ATO
(N T
O E2)
D .T.
.U
(+)
25VD
C
(approx)
(-)
0
-0.25A
1
N N -
O IN
DC
U TIVE
O ILLO O
SC
SC PE
(N
OTE1)
(-)
-1.0A
1cm
NOTE
S:1.RISE TIM =7ns M
E
AX.INP IM E
UT P DANCE
=1M
Ω.22pF
2.RISE TIM =10ns M
E
AX.SOURCE IM E
P DANCE
=50Ω.
SE TIM BASE FOR 20/30 ns/cm
T
E
FIG.2 --FORWARD DERATING CURVE
Z
FIG.3--TYPICAL JUNCTION CAPACITANCE
AVERAGE FORWARD RECTIFIED CURRENT.
1.4
1.2
1
0.8
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
JUNCTION CAPACITANCE,pF
200
100
60
40
20
10
4
2
1
0.1 0.2
0.4
1
2
4
10
20
40
100
ERB38-06
ERB38-04---ERB38-05
AMPERES
0.6
0.4
0.2
0
T
J
=25
0
20
40
60
80
100
120
140 150
AMBIENT TEMPERATURE.
REVERSE VOLTAGE,VOLTS
PEAK FORWARD SURGE CURRENT.
20
T
J
=125
8.3ms Single Half
Sine-Wave
INSTANTANEOUS FORWARD CURRENT
FIG.4--PEAK FORWARD SURGE CURRENT
FIG.5 -- TYPICAL FORWARD CHARACTERISTIC
10
15
AMPERES
10
AMPERES
1.0
0.8
5
0.1
T
J
=25
Pulse Width=300
µ
S
0
1
2
4
8 10
20
40 60 80 100
0.01
0
0.4 0.8 1.2 1.6
2.0 2.4 2.8 3.2
3.6 4
NUMBER OF CYCLES AT 60HZ
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
E-mail: sales@taychipst.com
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Web Site: www.taychipst.com
Microcontroller MCU
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