2SK315G datasheet, PDF - EEWORLD Datasheet

2SK315G: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SPA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size128KB，5 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SK315G Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SPA, 3 PIN

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
Configuration	SINGLE
Maximum drain current (ID)	0.02 A
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	0.3 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

	2SK315G	2SK315F	2SK315E
Description	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SPA, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SPA, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SPA, 3 PIN
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Contacts	3	3	3
Reach Compliance Code	unknow	unknow	unknow
Configuration	SINGLE	SINGLE	SINGLE
Maximum drain current (ID)	0.02 A	0.02 A	0.02 A
FET technology	JUNCTION	JUNCTION	JUNCTION
Maximum feedback capacitance (Crss)	0.3 pF	0.3 pF	0.3 pF
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	125 °C	125 °C	125 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1

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