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NTB6412AN_12

Description
58 A, 100 V, 0.0182 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size135KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

NTB6412AN_12 Overview

58 A, 100 V, 0.0182 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

NTB6412AN_12 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage100 V
Processing package descriptionLEAD FREE, CASE 221A-09, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingMATTE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
Transistor component materialsSILICON
Maximum ambient power consumption167 W
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current58 A
Rated avalanche energy300 mJ
Maximum drain on-resistance0.0182 ohm
Maximum leakage current pulse240 A
NTB6412AN, NTP6412AN,
NVB6412AN
N-Channel Power MOSFET
100 V, 58 A, 18.2 mW
Features
Low R
DS(on)
High Current Capability
100% Avalanche Tested
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C Unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous
Continuous Drain Cur-
rent R
qJC
Power Dissipation
R
qJC
Pulsed Drain Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
T
J
, T
stg
I
S
E
AS
Symbol
V
DSS
V
GS
I
D
Value
100
$20
58
41
167
240
−55
to
+175
58
300
W
A
°C
A
mJ
Unit
V
V
A
http://onsemi.com
I
D
MAX
(Note 1)
58 A
V
(BR)DSS
100 V
R
DS(ON)
MAX
18.2 mW @ 10 V
N−Channel
D
G
S
4
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
3
D
2
PAK
CASE 418B
STYLE 2
t
p
= 10
ms
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 Vdc, V
GS
= 10 Vdc,
I
L(pk)
= 44.7 A, L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
1
2
T
L
260
°C
4
Drain
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain) Steady State
Junction−to−Ambient (Note 1)
Symbol
R
qJC
R
qJA
Max
0.9
33
Unit
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
NTP
6412ANG
AYWW
1
Gate
2
Drain
3
Source
1
Gate
NTB
6412ANG
AYWW
2
Drain
3
Source
6412AN = Specific Device Code
G
= Pb−Free Device
A
= Assembly Location
Y
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
January, 2012
Rev. 1
1
Publication Order Number:
NTB6412AN/D

NTB6412AN_12 Related Products

NTB6412AN_12 NVB6412AN NTP6412AN
Description 58 A, 100 V, 0.0182 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 58 A, 100 V, 0.0182 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 58 A, 100 V, 0.0182 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of terminals 3 3 3
Minimum breakdown voltage 100 V 100 V 100 V
Processing package description LEAD FREE, CASE 221A-09, 3 PIN LEAD FREE, CASE 221A-09, 3 PIN LEAD FREE, CASE 221A-09, 3 PIN
Lead-free Yes Yes Yes
EU RoHS regulations Yes Yes Yes
state ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
terminal coating MATTE TIN MATTE TIN MATTE TIN
Terminal location SINGLE SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Shell connection DRAIN DRAIN DRAIN
Number of components 1 1 1
Transistor component materials SILICON SILICON SILICON
Maximum ambient power consumption 167 W 167 W 167 W
Channel type N-CHANNEL N-CHANNEL N-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Maximum leakage current 58 A 58 A 58 A
Rated avalanche energy 300 mJ 300 mJ 300 mJ
Maximum drain on-resistance 0.0182 ohm 0.0182 ohm 0.0182 ohm
Maximum leakage current pulse 240 A 240 A 240 A
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