NTP6412AN datasheet, PDF - EEWORLD Datasheet

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NTP6412AN: Description58 A, 100 V, 0.0182 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size135KB，7 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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NTP6412AN Overview

58 A, 100 V, 0.0182 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

NTP6412AN Parametric

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	100 V
Processing package description	LEAD FREE, CASE 221A-09, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	MATTE TIN
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN
Number of components	1
Transistor component materials	SILICON
Maximum ambient power consumption	167 W
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER
Maximum leakage current	58 A
Rated avalanche energy	300 mJ
Maximum drain on-resistance	0.0182 ohm
Maximum leakage current pulse	240 A

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NTB6412AN, NTP6412AN,

NVB6412AN

N-Channel Power MOSFET

100 V, 58 A, 18.2 mW

Features

•

Low R

DS(on)

High Current Capability

100% Avalanche Tested

NVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•

These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS

= 25°C Unless otherwise specified)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

−

Continuous

Continuous Drain Cur-

rent R

qJC

Power Dissipation

qJC

Pulsed Drain Current

Steady

State

Steady

State

= 25°C

= 100°C

= 25°C

, T

stg

Symbol

DSS

Value

100

$20

167

240

−55

+175

300

°C

Unit

http://onsemi.com

MAX

(Note 1)

58 A

(BR)DSS

100 V

DS(ON)

MAX

18.2 mW @ 10 V

N−Channel

TO−220AB

CASE 221A

STYLE 5

PAK

CASE 418B

STYLE 2

= 10

Operating Junction and Storage Temperature

Range

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (V

= 50 Vdc, V

= 10 Vdc,

L(pk)

= 44.7 A, L = 0.3 mH, R

= 25

Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

260

°C

Drain

MARKING DIAGRAM

& PIN ASSIGNMENT

Drain

THERMAL RESISTANCE RATINGS

Parameter

Junction−to−Case (Drain) Steady State

Junction−to−Ambient (Note 1)

Symbol

qJC

qJA

Max

0.9

Unit

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 sq in pad size,

(Cu Area 1.127 sq in [2 oz] including traces).

NTP

6412ANG

AYWW

Gate

Drain

Source

Gate

NTB

6412ANG

AYWW

Drain

Source

6412AN = Specific Device Code

= Pb−Free Device

= Assembly Location

= Year

WW = Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Semiconductor Components Industries, LLC, 2012

January, 2012

−

Rev. 1

Publication Order Number:

NTB6412AN/D

NTP6412AN Related Products

	NTP6412AN	NTB6412AN_12	NVB6412AN
Description	58 A, 100 V, 0.0182 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	58 A, 100 V, 0.0182 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	58 A, 100 V, 0.0182 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of terminals	3	3	3
Minimum breakdown voltage	100 V	100 V	100 V
Processing package description	LEAD FREE, CASE 221A-09, 3 PIN	LEAD FREE, CASE 221A-09, 3 PIN	LEAD FREE, CASE 221A-09, 3 PIN
Lead-free	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
terminal coating	MATTE TIN	MATTE TIN	MATTE TIN
Terminal location	SINGLE	SINGLE	SINGLE
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN	DRAIN	DRAIN
Number of components	1	1	1
Transistor component materials	SILICON	SILICON	SILICON
Maximum ambient power consumption	167 W	167 W	167 W
Channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Maximum leakage current	58 A	58 A	58 A
Rated avalanche energy	300 mJ	300 mJ	300 mJ
Maximum drain on-resistance	0.0182 ohm	0.0182 ohm	0.0182 ohm
Maximum leakage current pulse	240 A	240 A	240 A

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