Ordering number : ENA0842A
TF252TH
SANYO Semiconductors
DATA SHEET
TF252TH
Features
•
•
•
•
•
•
•
N-channel Silicon Juncton FET
Electret Condenser Microphone
Applications
High gain : GV=1.0dB typ (VCC=2V, RL=2.2k
Ω
, Cin=5pF, VIN=10mV, f=1kHz)
Ultrasmall package facilitates miniaturization in end products
Best suited for use in electret condenser microphone for audio equipments and telephones
Excellent voltage characteristics
Excellent transient characteristics
Adoption of FBET process
Halogen free compliance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Conditions
Ratings
--20
10
1
100
150
--55 to +150
Unit
V
mA
mA
mW
°C
°C
Package Dimensions
unit : mm (typ)
7031A-001
TF252TH-4-TL-H
TF252TH-5-TL-H
0 to 0.02
Product & Package Information
• Package
: VTFP
• JEITA, JEDEC
: SC-106A
• Minimum Packing Quantity : 8,000 pcs./reel
1.4
0.25
0.2
3
0.1
Packing Type: TL
Marking
1.2
0.8
LOT No.
D
LOT No.
0.2
1
2
0.2
TL
0.45
Electrical Connection
1
0.07
0.34
1
2
1 : Drain
2 : Source
3 : Gate
SANYO : VTFP
3
0.07
3
2
http://semicon.sanyo.com/en/network
53012 TKIM/70407GB TI IM TC-00000796 No. A0842-1/7
RANK
TF252TH
Electrical Characteristics
at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Voltage Gain
Reduced Voltage Characteristic
Frequency Characteristic
Total Harmonic Distortion
Output Noise Voltage
Symbol
V(BR)GDO
VGS(off)
IDSS
|
yfs
|
Ciss
Crss
GV
ΔG
VV
ΔGvf
THD
VNO
Conditions
IG=--100μA
VDS=2V, ID=1μA
VDS=2V, VGS=0V
VDS=2V, VGS=0V, f=1kHz
VDS=2V, VGS=0V, f=1MHz
Ratings
min
--20
-
-0.1
140*
0.8
1.4
3.1
0.95
1.0
--0.6
0.65
--106
-
-102
--2.0
-
-1.0
--0.4
--1.0
350*
typ
max
Unit
V
V
μA
mS
pF
pF
dB
dB
dB
%
dB
[Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.]
VIN=10mV, f=1kHz
VIN=10mV, f=1kHz, VCC=2.0V
→
1.5V
f=1kHz to 110Hz
VIN=30mV, f=1kHz
VIN=0V, A curve
*
: The TF252TH is classified by IDSS as follows : (unit :
μ
A)
Rank
IDSS
4
140 to 240
5
210 to 350
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
2.2kΩ
VCC=2V
VCC=1.5V
5pF
33μF
+
VTVM V THD
OSC
Ordering Information
Device
TF252TH-4-TL-H
TF252TH-5-TL-H
Package
VTFP
VTFP
Shipping
8,000pcs./reel
8,000pcs./reel
memo
Pb Free and Halogen Free
No. A0842-2/7
TF252TH
300
ID -- VDS
V GS=0V
350
ID -- VDS
V
V GS=0
250
300
Drain Current, ID --
μA
Drain Current, ID --
μA
250
200
--0.05V
--0.10V
200
150
--0.1V
150
100
--0.15V
--0.20V
--0.30V
2.0
IT12440
100
--0.2V
50
50
--0.25V
0
0
0.5
1.0
1.5
--0.3V
0
0
1
2
3
4
--0.4V
5
IT12441
Drain-to-Source Voltage, VDS -- V
400
350
ID -- VGS
Drain-to-Source Voltage, VDS -- V
400
ID -- VGS
VDS=2V
350
VDS=2V
Drain Current, ID --
μA
250
200
150
100
50
0
--0.6
Drain Current, ID --
μA
300
300
250
200
50
μ
A
S =3
75
°
C
Ta
=
A
ID
S
0
μ
150
100
50
0
--0.6
0
μ
A
25
25
--0.1
°
C
15
--0.5
--0.4
--0.3
--0.2
--0.1
0
IT12442
--0.5
--0.4
--0.3
--0.2
--2
0
IT12443
Gate-to-Source Voltage, VGS -- V
1.7
|
y
fs
|
-- IDSS
Gate-to-Source Voltage, VGS -- V
--0.60
--0.55
VGS(off) -- IDSS
Forward Transfer Admittance,
|
y
fs
|
-- mS
1.6
Cutoff Voltage, VGS(off) -- V
VDS=2V
VGS=0V
f=1kHz
VDS=2V
ID=1μA
--0.50
--0.45
--0.40
--0.35
--0.30
--0.25
--0.20
100
1.5
1.4
1.3
1.2
1.1
1.0
100
150
200
250
300
350
400
IT12444
150
200
250
300
350
5
°
C
400
IT12445
Zero-Gate Voltage Drain Current, IDSS --
μA
10
Ciss -- VDS
Zero-Gate Voltage Drain Current, IDSS --
μA
3
Crss -- VDS
7
Reverse Transfer Capacitance, Crss -- pF
VGS=0V
f=1MHz
Input Capacitance, Ciss -- pF
VGS=0V
f=1MHz
2
5
1.0
3
7
2
5
1.0
5
7
1.0
2
3
5
7
10
2
3
IT12446
3
5
7
1.0
2
3
5
7
10
2
3
IT12447
Drain-to-Source Voltage, VDS -- V
Drain-to-Source Voltage, VDS -- V
No. A0842-3/7
TF252TH
1.8
1.6
1.4
GV -- IDSS
GV : VCC=2V
VIN=10mV
f=1kHz
RL=2.2kΩ
Cin=5pF
IDSS : VDS=2V
Reduced Voltage Characteristic,
ΔG
VV -- dB
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
100
ΔG
VV -- IDSS
ΔG
VV : VCC=2V→1.5V
VIN=10mV
f=1kHz
RL=2.2kΩ
Cin=5pF
IDSS : VDS=2V
Voltage Gain, GV -- dB
1.2
1.0
0.8
0.6
0.4
0.2
0
--0.2
--0.4
100
150
200
250
300
350
400
IT12448
150
200
250
300
350
400
IT12449
Zero-Gate Voltage Drain Current, IDSS --
μA
2
THD -- VIN
Zero-Gate Voltage Drain Current, IDSS --
μA
1.4
THD -- IDSS
Total Harmonic Distortion, THD -- %
10
7
5
3
2
1.0
7
5
3
2
0.1
0
Total Harmonic Distortion, THD -- %
THD : VCC=2V
f=1kHz
RL=2.2kΩ
Cin=5pF
50
μ
A
IDSS : VDS=2V
I DSS=1
A
250
μ
350
μ
A
1.2
1.0
THD : VCC=2V
VIN=30mV
f=1kHz
RL=2.2kΩ
Cin=5pF
IDSS : VDS=2V
0.8
0.6
0.4
0.2
0
100
50
100
150
200
IT12450
150
200
250
300
350
400
IT12451
Input Voltage, VIN -- mV
120
PD -- Ta
Zero-Gate Voltage Drain Current, IDSS --
μA
Allowable Power Dissipation, PD -- mW
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
IT12453
Ambient Temperature, Ta --
°
C
No. A0842-4/7
TF252TH
Taping Specification
TF252TH-4-TL-H, TF252TH-5-TL-H
No. A0842-5/7
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