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NGB15N41ACL

Description
Ignition IGBT 15 A, 410 V N.Channel DPAK, D2PAK and TO.220
File Size141KB,11 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NGB15N41ACL Overview

Ignition IGBT 15 A, 410 V N.Channel DPAK, D2PAK and TO.220

NGD15N41CL,
NGD15N41ACL,
NGB15N41CL,
NGB15N41ACL,
NGP15N41CL,
NGP15N41ACL
Ignition IGBT 15 A, 410 V
http://onsemi.com
N−Channel DPAK, D
2
PAK and TO−220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
15 AMPS
410 VOLTS
V
CE(on)
3
2.1 V @
I
C
= 10 A, V
GE
.
4.5 V
C
Ideal for Coil−on−Plug Applications
DPAK Package Offers Smaller Footprint and Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
G
) and Gate−Emitter Resistor (R
GE
)
These are Pb−Free Devices
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ T
C
= 25°C
Pulsed
ESD (Human Body Model)
R = 1500
Ω,
C = 100 pF
ESD (Machine Model) R = 0
Ω,
C = 200 pF
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Temperature Range
Symbol
V
CES
V
CER
V
GE
I
C
ESD
8.0
ESD
P
D
T
J
, T
stg
800
107
0.71
−55
to
+175
V
Watts
W/°C
°C
Value
440
440
15
15
50
Unit
V
DC
V
DC
V
DC
A
DC
A
AC
kV
G
R
G
R
GE
E
4
1 2
DPAK
CASE 369C
STYLE 2
3
4
1
2
3
4
D
2
PAK
CASE 418B
STYLE 4
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
TO−220AB
CASE 221A
STYLE 9
1
2
3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
December, 2011
Rev. 8
1
Publication Order Number:
NGD15N41CL/D

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