NGD15N41CL,
NGD15N41ACL,
NGB15N41CL,
NGB15N41ACL,
NGP15N41CL,
NGP15N41ACL
Ignition IGBT 15 A, 410 V
http://onsemi.com
N−Channel DPAK, D
2
PAK and TO−220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
15 AMPS
410 VOLTS
V
CE(on)
3
2.1 V @
I
C
= 10 A, V
GE
.
4.5 V
C
•
•
•
•
•
•
•
•
•
•
•
Ideal for Coil−on−Plug Applications
DPAK Package Offers Smaller Footprint and Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
G
) and Gate−Emitter Resistor (R
GE
)
These are Pb−Free Devices
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ T
C
= 25°C
−
Pulsed
ESD (Human Body Model)
R = 1500
Ω,
C = 100 pF
ESD (Machine Model) R = 0
Ω,
C = 200 pF
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Temperature Range
Symbol
V
CES
V
CER
V
GE
I
C
ESD
8.0
ESD
P
D
T
J
, T
stg
800
107
0.71
−55
to
+175
V
Watts
W/°C
°C
Value
440
440
15
15
50
Unit
V
DC
V
DC
V
DC
A
DC
A
AC
kV
G
R
G
R
GE
E
4
1 2
DPAK
CASE 369C
STYLE 2
3
4
1
2
3
4
D
2
PAK
CASE 418B
STYLE 4
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
TO−220AB
CASE 221A
STYLE 9
1
2
3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
December, 2011
−
Rev. 8
1
Publication Order Number:
NGD15N41CL/D
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS
(−55°
≤
T
J
≤
175°C)
Characteristic
Single Pulse Collector−to−Emitter Avalanche Energy
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 16.6 A, L = 1.8 mH, Starting T
J
= 25°C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 15 A, L = 1.8 mH, Starting T
J
= 125°C
Symbol
E
AS
Value
250
200
Unit
mJ
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
DPAK (Note 1)
D
2
PAK (Note 1)
TO−220
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Symbol
R
θJC
R
θJA
R
θJA
R
θJA
T
L
Value
1.4
100
50
62.5
275
°C
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
BV
CES
I
C
= 2.0 mA
I
C
= 10 mA
Zero Gate Voltage Collector Current
I
CES
T
J
=
−40°C
to
150°C
T
J
=
−40°C
to
150°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
Reverse Collector−Emitter Clamp Voltage
B
VCES(R)
I
C
=
−75
mA
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor
Gate Emitter Resistor
BV
GES
I
GES
R
G
R
GE
I
G
= 5.0 mA
V
GE
= 10 V
−
−
T
J
=
−40°C
to
150°C
T
J
=
−40°C
to
150°C
T
J
=
−40°C
to
150°C
T
J
=
−40°C
to
150°C
380
380
−
−
−
−
−
−
27
30
25
11
384
−
10
410
410
2.0
10
1.0
0.7
12
0.1
33
36
31
13
640
70
16
440
440
20
40*
10
2.0
25*
1.0
37
40
35
15
1000
−
26
V
DC
μA
DC
Ω
V
DC
V
CE
= 350 V,
V
GE
= 0 V
μA
DC
Reverse Collector−Emitter Leakage Current
I
ECS
mA
V
CE
=
−24
V
V
DC
kΩ
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GE(th)
I
C
= 1.0 mA,
V
GE
= V
CE
−
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
−
1.1
0.75
1.2
−
1.4
1.0
1.6
3.4
1.9
1.4
2.1*
−
mV/°C
V
DC
Threshold Temperature Coefficient
(Negative)
−
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width
v
300
μS,
Duty Cycle
v
2%.
*Maximum Value of Characteristic across Temperature Range.
http://onsemi.com
2
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
ELECTRICAL CHARACTERISTICS
(continued)
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
ON CHARACTERISTICS (continued)
(Note 3)
Collector−to−Emitter On−Voltage
V
CE(on)
I
C
= 6.0 A,
V
GE
= 4.0 V
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
=
−40°C
to
150°C
1.0
0.9
1.1
1.3
1.2
1.4
1.4
1.5
1.4
1.3
1.3
1.4
8.0
1.6
1.5
1.65
1.8
1.7
1.8
2.0
2.0
2.0
1.9
1.9
1.95
15
1.8
1.8
1.9*
2.0*
1.9
2.0*
2.2
2.3*
2.2
2.1
2.1
2.1*
25
Mhos
V
DC
I
C
= 8.0 A,
V
GE
= 4.0 V
I
C
= 10 A,
V
GE
= 4.0 V
I
C
= 10 A,
V
GE
= 4.5 V
Forward Transconductance
gfs
V
CE
= 5.0 V, I
C
= 6.0 A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
C
ISS
C
OSS
C
RSS
400
V
CC
= 25 V, V
GE
= 0 V
f = 1.0 MHz
T
J
=
−40°C
to
150°C
30
3.0
650
55
4.5
1000
100
8.0
pF
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Inductive)
t
d(off)
t
f
t
d(off)
t
f
t
d(on)
t
r
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, L = 300
μH
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, L = 300
μH
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, R
L
= 46
Ω,
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, R
L
= 46
Ω,
V
CC
= 10 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, R
L
= 1.5
Ω
V
CC
= 10 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, R
L
= 1.5
Ω
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
−
−
−
−
−
−
−
−
−
−
−
−
4.0
4.5
6.0
10
3.0
3.5
8.0
12
0.7
0.7
4.0
5.0
10
10
12
12
10
10
15
15
4.0
4.0
7.0
7.0
μSec
μSec
μSec
Fall Time (Inductive)
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−On Delay Time
Rise Time
3. Pulse Test: Pulse Width
v
300
μS,
Duty Cycle
v
2%.
*Maximum Value of Characteristic across Temperature Range.
http://onsemi.com
3
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
TYPICAL ELECTRICAL CHARACTERISTICS
(unless otherwise noted)
60
I
C,
COLLECTOR CURRENT (AMPS)
50
40
30
20
10
0
T
J
= 25°C
5V
4.5 V
4V
3.5 V
3V
2.5 V
0
1
2
3
4
5
6
7
8
I
C,
COLLECTOR CURRENT (AMPS)
V
GE
= 10 V
60
V
GE
= 10 V
50
5V
40
30
20
10
0
T
J
=
−40°C
4.5 V
4V
3.5 V
3V
2.5 V
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
60
I
C,
COLLECTOR CURRENT (AMPS)
V
GE
= 10 V
50
40
30
20
10
0
T
J
= 150°C
5V
4.5 V
4V
3.5 V
3V
2.5 V
30
I
C,
COLLECTOR CURRENT (AMPS)
Figure 2. Output Characteristics
V
CE
= 10 V
25
20
15
10
5
0
T
J
= 25°C
T
J
= 150°C
0
0.5
1
1.5
2
T
J
=
−40°C
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
V
GE
, GATE TO EMITTER VOLTAGE (VOLTS)
Figure 3. Output Characteristics
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
−50
−25
0
25
50
75
100
125
150
V
GE
= 5 V
I
C
= 25 A
I
C
= 20 A
I
C
= 15 A
I
C
= 10 A
I
C
= 5 A
3
2.5
2
1.5
1
0.5
0
T
J
= 25°C
I
C
= 15 A
I
C
= 10 A
I
C
= 5 A
3
4
5
6
7
8
9
10
T
J
, JUNCTION TEMPERATURE (°C)
GATE TO EMITTER VOLTAGE (VOLTS)
Figure 5. Collector−to−Emitter Saturation
Voltage versus Junction Temperature
Figure 6. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
http://onsemi.com
4
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
COLLECTOR TO EMITTER VOLTAGE (VOLTS)
3
2.5
2
1.5
1
0.5
0
I
C
= 15 A
I
C
= 10 A
I
C
= 5 A
T
J
= 150°C
10000
1000
100
10
1
0
C
iss
C, CAPACITANCE (pF)
C
oss
C
rss
3
4
5
6
7
8
9
10
0
20
40
60
80
100 120
140 160 180 200
GATE TO EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 7. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
2
THRESHOLD VOLTAGE (VOLTS)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−50 −30 −10
10
30
50
70
90
110 130 150
Mean
−
4
σ
I
L
, LATCH CURRENT (AMPS)
1.8
Mean + 4
σ
Mean
30
25
20
15
10
Figure 8. Capacitance Variation
V
CC
= 50 V
V
GE
= 5 V
R
G
= 1000
Ω
L = 2 mH
L = 3 mH
L = 6 mH
5
0
−50 −25
0
25
50
75
100
125
150
175
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 9. Gate Threshold Voltage versus
Temperature
30
25
I
L
, LATCH CURRENT (AMPS)
20
15
L = 3 mH
10
L = 6 mH
5
0
−50 −25
L = 2 mH
V
CC
= 50 V
V
GE
= 5 V
R
G
= 1000
Ω
12
10
SWITCHING TIME (μs)
8
6
4
2
Figure 10. Minimum Open Secondary Latch
Current versus Temperature
V
CC
= 300 V
V
GE
= 5 V
R
G
= 1000
Ω
I
C
= 10 A
L = 300
μH
t
f
t
d(off)
0
25
50
75
100
125
150
175
0
−50 −30 −10
10
30
50
70
90
110 130 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 11. Typical Open Secondary Latch
Current versus Temperature
http://onsemi.com
5
Figure 12. Inductive Switching Fall Time
versus Temperature
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
