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NGB8207ABNT4G

Description
Ignition IGBT 20 A, 365 V, N.Channel D2PAK
CategoryDiscrete semiconductor    The transistor   
File Size120KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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NGB8207ABNT4G Overview

Ignition IGBT 20 A, 365 V, N.Channel D2PAK

NGB8207ABNT4G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerON Semiconductor
Contacts3
Manufacturer packaging code418B-04
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time1 week
Maximum collector current (IC)20 A
Collector-emitter maximum voltage365 V
Maximum landing time (tf)15000 ns
Gate emitter threshold voltage maximum2 V
Gate-emitter maximum voltage15 V
JESD-609 codee3
Maximum operating temperature175 °C
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)165 W
Maximum rise time (tr)2700 ns
surface mountYES
Terminal surfaceMatte Tin (Sn)
Maximum time at peak reflow temperatureNOT SPECIFIED
NGB8207AN, NGB8207ABN
Ignition IGBT
20 A, 365 V, N−Channel D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
http://onsemi.com
Ideal for Coil−on−Plug and Driver−on−Coil Applications
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Minimum Avalanche Energy
500 mJ
Gate Resistor (R
G
) = 70
W
This is a Pb−Free Device
20 AMPS, 365 VOLTS
V
CE(on)
= 1.75 V
Typ @ I
C
= 10 A, V
GE
.
4.5 V
C
G
R
G
R
GE
E
D
2
PAK
CASE 418B
STYLE 4
Applications
Ignition Systems
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ T
C
= 25°C
Pulsed
Continuous Gate Current
Transient Gate Current (t
2 ms, f
100 Hz)
ESD (Charged−Device Model)
ESD (Human Body Model)
R = 1500
W,
C = 100 pF
ESD (Machine Model) R = 0
W,
C = 200 pF
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C (Note 1)
Operating & Storage Temperature Range
Symbol
V
CES
V
GE
I
C
I
G
I
G
ESD
ESD
ESD
P
D
T
J
, T
stg
Value
365
$15
20
50
1.0
20
2.0
8.0
500
165
1.1
−55
to
+175
Unit
V
V
A
DC
A
AC
mA
mA
kV
kV
V
W
W/°C
°C
1
MARKING DIAGRAM
4
Collector
NGB
8207AxG
AYWW
1
Gate
3
Emitter
2
Collector
NGB8207Ax = Device Code
x = N or B
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
NGB8207ANT4G
NGB8207ABNT4G
Package
Shipping
D
2
PAK
800 / Tape & Reel
(Pb−Free)
D
2
PAK
800 / Tape & Reel
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Assuming infinite heatsink Case−to−Ambient
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
December, 2011
Rev. 1
1
Publication Order Number:
NGB8207AN/D

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