Ordering number : ENA1767
MCH3481
SANYO Semiconductors
DATA SHEET
MCH3481
Features
•
•
N-Channel Silicon MOSFET
Low Votage Drive Switching Device
Applications
•
•
ON-resistance RDS(on)1=80m
Ω
(typ.)
Halogen free compliance
1.2V drive
Protection diode in
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
×0.8mm)
2
Conditions
Ratings
20
±9
2
8
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Package Dimensions
unit : mm (typ)
7019A-003
MCH3481-TL-H
0.25
2.0
0.15
Product & Package Information
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
3
2.1
1.6
0 t o 0.02
TL
FN
LOT No.
LOT No.
1
0.25
0.65
2
0.3
Electrical Connection
3
0.85
0.07
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
1
2
http://semicon.sanyo.com/en/network
61312TKIM TC-00002669 No. A1767-1/7
MCH3481
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=2A, VGS=0V
VDS=10V, VGS=4.5V, ID=2A
VDS=10V, f=1MHz
Conditions
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±7.2V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4.5V
ID=0.5A, VGS=2.5V
ID=0.3A, VGS=1.8V
ID=0.1A, VGS=1.2V
0.3
2.4
80
105
135
270
175
30
25
6.6
See specified Test Circuit.
27
28
19
2.9
0.46
0.53
0.85
1.2
104
147
203
540
Ratings
min
20
1
±10
0.9
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Static Drain-to-Source On-State Resistance
Switching Time Test Circuit
4.5V
0V
VIN
VDD=10V
ID=1A
RL=10Ω
D
VOUT
VIN
PW=10μs
D.C.≤1%
G
MCH3481
P.G
50Ω
S
Ordering Information
Device
MCH3481-TL-H
Package
MCPH3
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1767-2/7
MCH3481
2.0
ID -- VDS
4.5V
3
ID -- VGS
Ta=
--25
°
C
75
°
C
0.6
0.8
2.5V
1.8V
1.
5V
Drain Current, ID -- A
Drain Current, ID -- A
1.5
6.0V
2
1.2V
1.0
1
0.5
VGS=1.0V
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0
0.2
0.4
Ta=
75
°
C
25
°
--25
°
C
C
1.0
1.2
1.4
1.6
25
°
C
1.8
2.0
IT15670
120
140
160
IT15672
VDS=10V
Drain-to-Source Voltage, VDS -- V
800
RDS(on) -- VGS
IT15669
400
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
700
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
350
300
250
200
150
100
50
0
--60
ID=0.1A
600
500
400
300
200
100
0
0.3A
0.5A
1.0A
A
I =0.1
=1.2V, D
V GS
=0.3A
.5A
V, I D
, I D=0
=1.8
=2.5V
V GS
V GS
=1.0A
=4.5V, I D
V GS
--40
--20
0
20
40
60
80
100
0
2
4
6
8
IT15671
Gate-to-Source Voltage, VGS -- V
7
|
y
fs
|
-- ID
Ambient Temperature, Ta --
°
C
5
IS -- VSD
Forward Transfer Admittance,
|
y
fs
|
-- S
5
3
2
VDS=10V
3
2
VGS=0V
Source Current, IS -- A
1.0
7
5
3
2
1.0
7
5
3
2
°
C
-25
=-
C
Ta
75
°
°
C
25
Ta=
75
°
C
0
0.2
0.4
0.1
7
5
3
0.1
7
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
2
0.01
25
°
C
--25
°
C
0.6
0.8
1.0
1.2
IT15674
Drain Current, ID -- A
500
RDS(on) -- ID
IT15673
2
Diode Forward Voltage, VSD -- V
SW Time -- ID
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
450
400
350
300
250
200
150
100
50
0
0.001 2 3
5 70.01
2 3
5 7 0.1
Switching Time, SW Time -- ns
100
7
5
3
2
VDD=10V
VGS=4.5V
VGS=1.2V
td(off)
tf
tr
1.8V
4.5V
2 3
2.5V
10
7
5
3
td(on)
5 7 1.0
2 3
Drain Current, ID -- A
5 7 10
IT16213
2
0.1
2
3
5
7
1.0
2
3
5
IT15675
Drain Current, ID -- A
No. A1767-3/7
MCH3481
7
5
3
Ciss, Coss, Crss -- VDS
f=1MHz
Gate-to-Source Voltage, VGS -- V
5
VGS -- Qg
VDS=10V
ID=2A
4
Ciss, Coss, Crss -- pF
2
Ciss
100
7
5
3
2
3
Coss
Crss
2
1
10
7
0
2
4
6
8
10
12
14
16
18
20
0
0
1
2
3
IT15677
Drain-to-Source Voltage, VDS -- V
2
10
7
5
ASO
IT15676
1.0
Total Gate Charge, Qg -- nC
PD -- Ta
10
Drain Current, ID -- A
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ID=2A
1m
10
s
m
s
10
0m
DC
s
op
er
ati
on
0
μ
s
Allowable Power Dissipation, PD -- W
IDP=8A(PW
≤
10
μs)
When mounted on ceramic substrate
(900mm
2
×0.8mm)
0.8
0.6
0.4
0.01
0.01
Operation in this area
is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm
2
×0.8mm)
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
IT16931
0.2
0
0
20
40
60
80
100
120
140
160
Drain-to-Source Voltage, VDS -- V
Ambient Temperature, Ta --
°C
IT16932
No. A1767-4/7
MCH3481
Taping Specification
MCH3481-TL-H
No. A1767-5/7
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