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SI2303

Description
P-Channel Enhancement Mode Field Effect Transistor
File Size384KB,5 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
Download Datasheet View All

SI2303 Overview

P-Channel Enhancement Mode Field Effect Transistor

MCC
Micro Commercial Components
TM
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
SI2303
Features
-30V,-2.6A,
R
DS(ON)
=130m¡@V
GS
= -10V
-30V,-2.0A,
R
DS(ON)
=180m¡@V
GS
= -4.5V
High dense cell design for extremely low R
DS(ON)
Rugged and reliable
Lead free product is acquired
SOT-23 Package
Marking Code: S3
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Parameter
Drain-source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Gate-source Voltage
Total Power Dissipation
Thermal Resistance Junction to Ambient
b
Operating Junction Temperature
Storage Temperature
P-Channel
Enhancement Mode
Field Effect Transistor
SOT-23
A
D
Maximum Ratings @ 25
O
C Unless Otherwise Specified
Symbol
V
DS
I
D
I
DM
V
GS
P
D
R
©
JA
T
J
T
STG
Rating
-30
-3
-10
f20
0.25
5
00
-55 to +150
-55 to +150
Unit
V
A
A
V
W
/W
3
1.GATE
C
B
2. SOURCE
3. DRAIN
1
F
E
2
G
H
J
K
DIMENSIONS
Internal Block Diagram
D
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
G
.031
.800
.035
.900
.079
2.000
S
inches
mm
.037
.950
.037
.950
Revision:
A
www.mccsemi.com
1 of 5
2011/01/01
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