Ordering number : EN6446C
MCH6603
SANYO Semiconductors
DATA SHEET
MCH6603
Features
•
•
•
•
•
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance
Ultrahigh-speed switching
1.5V drive
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
Halogen free conplaiance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
×0.8mm)1unit
2
Conditions
Ratings
--50
±10
--0.14
--0.56
0.8
150
-
-55 to +150
Unit
V
V
A
A
W
°C
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
*
Machine Model
Package Dimensions
unit : mm (typ)
7022A-006
2.0
0.15
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
MCH6603-TL-H
0.25
6
5
4
0 t o 0.02
Packing Type : TL
Marking
LOT No.
LOT No.
FC
2.1
1.6
0.25
1
0.65
2
3
0.3
TL
Electrical Connection
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
6
5
4
0.07
0.85
1
2
3
6
5
4
1
2
3
http://semicon.sanyo.com/en/network
71112 TKIM/51506PE MSIM TB-00002290/O3105PE MSIM TB-00001861/N1999 TSIM TA-2458 No.6446-1/7
MCH6603
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=--70mA, VGS=0V
VDS=--10V, VGS=--10V, ID=--70mA
Conditions
ID=--1mA, VGS=0V
VDS=--50V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--100μA
VDS=--10V, ID=--40mA
ID=--40mA, VGS=--4V
ID=--20mA, VGS=--2.5V
ID=--5mA, VGS=--1.5V
VDS=--10V, f=1MHz
Ratings
min
--50
--1
±10
--0.4
70
110
18
20
30
7.4
4.2
1.3
20
See specified Test Circuit.
35
160
150
1.40
0.16
0.23
--0.85
--1.2
23
28
60
-
-1.4
typ
max
Unit
V
μA
μA
V
mS
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VDD= --25V
0V
--4V
VIN
VIN
ID= --40mA
RL=625Ω
D
VOUT
PW=10μs
D.C.≤1%
G
P.G
50Ω
S
MCH6603
Ordering Information
Device
MCH6603-TL-H
Package
MCPH6
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No.6446-2/7
MCH6603
--0.07
ID -- VDS
V
--6
.0V
V
--0.14
ID -- VGS
Ta=
--
25
°
C
--4
.0
--0.06
--
5
2.
--3
V
--0.12
.0
VDS= --10V
Drain Current, ID -- A
--3
.5V
--0.05
Drain Current, ID -- A
--0.1
--0.04
--0.08
--0.03
--0.06
--0.02
VGS= --1.5V
--0.04
--0.01
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
--0.02
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Drain-to-Source Voltage, VDS -- V
40
IT00090
100
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
75
°
C
25
°
C
--2.0V
IT00091
RDS(on) -- ID
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
7
VGS= --4V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
35
30
5
25
3
20
ID= --20mA
--40mA
Ta=75°C
2
25°C
--25°C
15
10
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
10
--0.01
2
3
5
7
--0.1
2
3
Gate-to-Source Voltage, VGS -- V
1000
7
IT00092
100
RDS(on) -- ID
Drain Current, ID -- A
IT00093
RDS(on) -- ID
VGS= --2.5V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
7
VGS= --1.5V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
5
3
2
5
Ta=75°C
3
100
7
5
3
2
25°C
--25°C
2
Ta=75°C
25°C
--25°C
2
3
5
7
--0.1
2
3
10
--0.01
10
--0.001
2
3
5
7
--0.01
2
3
Drain Current, ID -- A
40
IT00094
1.0
RDS(on) -- Ta
Drain Current, ID -- A
|
y
fs
|
-- ID
IT00095
Forward Transfer Admittance,
|
y
fs
|
-- S
7
5
3
2
VDS= --10V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
35
30
25
20
.5V
--2
=
S
,VG
0V
mA
-4.
20
=-
-
S
=-
VG
ID
A,
0m
--4
=
ID
°
Ta= --25
0.1
7
5
3
2
C
25
°
C
75
°
C
15
10
--60
--40
--20
0
20
40
60
80
100
120
140
160
0.01
--0.01
2
3
5
7
--0.1
2
3
Ambient Temperature, Ta --
°C
IT00096
Drain Current, ID -- A
IT00097
No.6446-3/7
MCH6603
5
3
IS -- VSD
VGS=0V
Switching Time, SW Time -- ns
1000
7
5
3
2
SW Time -- ID
VDD= --25V
VGS = --4V
tf
Source Current, IS -- A
2
td (off)
--0.1
7
5
3
2
100
7
5
3
2
tr
td(on)
5
°
C
--0.01
--0.5
--25
°
C
Ta=
7
25
°
C
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--1.2
10
--0.01
2
3
5
7
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
0
--5
Ciss, Coss, Crss -- VDS
f=1MHz
Gate-to-Source Voltage, VGS -- V
Diode Forward Voltage, VSD -- V
IT00098
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
Drain Current, ID -- A
--0.1
IT00099
VGS -- Qg
VDS= --10V
ID= --70mA
Ciss, Coss, Crss -- pF
Ciss
Coss
Crss
--10
--15
--20
--25
--30
--35
--40
--45
--50
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain-to-Source Voltage, VDS -- V
--1.0
7
5
IT00100
1.0
Total Gate Charge, Qg -- nC
IT00101
ASO
PD -- Ta
Allowable Power Dissipation, PD -- W
IDP= --0.56A
PW≤10μs
1m
s
10
ms
0.8
Drain Current, ID -- A
3
2
M
ou
nt
ed
on
ID= --0.14A
DC
op
10
0.6
ac
er
--0.1
7
5
3
2
0m
am
s
ic
bo
Operation in this
area is limited by RDS(on).
er
ati
o
ar
0.4
d(
n
90
0m
m
2
✕
0
0.2
.8m
m
--0.01
--1.0
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
✕0.8mm)
1unit
2
3
5
7
--10
2
3
5
)1
un
it
160
0
7 --100
IT01737
0
20
40
60
80
100
120
140
Drain-to-Source Voltage, VDS -- V
Ambient Temperature, Ta --
°C
IT01738
No.6446-4/7
MCH6603
Taping Specification
MCH6603-TL-H
No.6446-5/7
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