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MCH6603_12

Description
General-Purpose Switching Device Applications
File Size484KB,7 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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MCH6603_12 Overview

General-Purpose Switching Device Applications

Ordering number : EN6446C
MCH6603
SANYO Semiconductors
DATA SHEET
MCH6603
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance
Ultrahigh-speed switching
1.5V drive
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
Halogen free conplaiance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
×0.8mm)1unit
2
Conditions
Ratings
--50
±10
--0.14
--0.56
0.8
150
-
-55 to +150
Unit
V
V
A
A
W
°C
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
*
Machine Model
Package Dimensions
unit : mm (typ)
7022A-006
2.0
0.15
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
MCH6603-TL-H
0.25
6
5
4
0 t o 0.02
Packing Type : TL
Marking
LOT No.
LOT No.
FC
2.1
1.6
0.25
1
0.65
2
3
0.3
TL
Electrical Connection
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
6
5
4
0.07
0.85
1
2
3
6
5
4
1
2
3
http://semicon.sanyo.com/en/network
71112 TKIM/51506PE MSIM TB-00002290/O3105PE MSIM TB-00001861/N1999 TSIM TA-2458 No.6446-1/7

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