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GBJ1001

Description
Bridge Rectifier Diode, 1 Phase, 10A, 100V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size87KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
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GBJ1001 Overview

Bridge Rectifier Diode, 1 Phase, 10A, 100V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN

GBJ1001 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
package instructionR-PSFM-T4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage100 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-T4
JESD-609 codee0
Maximum non-repetitive peak forward current170 A
Number of components4
Phase1
Number of terminals4
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
MCC
Features
  omponents
21201 Itasca Street Chatsworth

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GBJ10005
THRU
GBJ1010
10 Amp
Glass Passivated
Bridge Rectifier
50 to 1000 Volts
GBJ
I
A
H
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability.
Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
MCC
Catalog
Number
GBJ10005
GBJ1001
GBJ1002
GBJ1004
GBJ1006
GBJ1008
GBJ1010
Device
Marking
Maximum
Reccurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
D
F
B
E
G
---
---
---
---
---
---
---
+
P
L
C
M
N
O
O
DIMENSIONS
INCHES
MIN
1.170
.780
.670
.019
.430
.090
.120
.130
.170
.100
.020
.080
.040
.390
.290
.150
MM
MIN
29.70
19.70
17.00
4.70
10.80
2.30
3.10
3.40
4.40
2.50
0.60
2.00
0.90
9.80
7.30
3.80
K
J
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
10 A
Tc = 110°C
Current
Peak Forward Surge
I
FSM
170A
8.3ms, half sine
Current
Maximum
I
FM
= 5.0A
1.05V
Instantaneous
V
F
Forward Voltage
T
J
= 25°C
Maximum DC
Reverse Current At
I
R
10 µA
T
J
= 25°C
Rated DC Blocking
500uA T
J
= 125°C
Voltage
Typical thermal
resistance
R
OJC
1.4
°C
/W
Typical Junction
C
J
55 pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
MAX
1.190
.800
.710
.019
.440
.110
.130
.150
.190
.110
.030
.090
.040
.400
.300
.170
MAX
30.30
20.30
18.00
4.90
11.20
2.70
3.40
3.80
4.80
2.90
0.80
2.40
1.10
10.20
7.70
4.20
NOTE
www.mccsemi.com

GBJ1001 Related Products

GBJ1001 GBJ1002 GBJ1004 GBJ1006 GBJ1008 GBJ1010 GBJ10005
Description Bridge Rectifier Diode, 1 Phase, 10A, 100V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN Bridge Rectifier Diode, 1 Phase, 10A, 200V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN Bridge Rectifier Diode, 1 Phase, 10A, 400V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN Bridge Rectifier Diode, 1 Phase, 10A, 600V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN Bridge Rectifier Diode, 1 Phase, 10A, 800V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN Bridge Rectifier Diode, 1 Phase, 10A, 1000V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN Bridge Rectifier Diode, 1 Phase, 10A, 50V V(RRM), Silicon, PLASTIC, GBJ, 4 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
package instruction R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Contacts 4 4 4 4 4 4 4
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Minimum breakdown voltage 100 V 200 V 400 V 600 V 800 V 1000 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Maximum non-repetitive peak forward current 170 A 170 A 170 A 170 A 170 A 170 A 170 A
Number of components 4 4 4 4 4 4 4
Phase 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4 4
Maximum output current 10 A 10 A 10 A 10 A 10 A 10 A 10 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 100 V 200 V 400 V 600 V 800 V 1000 V 50 V
surface mount NO NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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