MUN2111, MMUN2111L,
MUN5111, DTA114EE,
DTA114EM3, NSBA114EF3
Digital Transistors (BRT)
R1 = 10 kW, R2 = 10 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
PIN 1
BASE
(INPUT)
http://onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
•
•
•
•
MARKING DIAGRAMS
SC−59
CASE 318D
STYLE 1
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
40
10
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
XX MG
G
1
XXX MG
G
1
XX MG
G
1
XX M
1
XX M
1
XM 1
XXX
M
G
SOT−23
CASE 318
STYLE 6
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
December, 2013
−
Rev. 7
1
Publication Order Number:
DTA114E/D
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
Table 1. ORDERING INFORMATION
Device
MUN2111T1G, SMUN2111T1G
SMUN2111T3G
MMUN2111LT1G, SMMUN2111LT1G
MMUN2111LT3G, SMMUN2111LT3G
MUN5111T1G, SMUN5111T1G
DTA114EET1G, NSVDTA114EET1G
DTA114EM3T5G, NSVDTA114EM3T5G
NSBA114EF3T5G
Part Marking
6A
6A
A6A
A6A
6A
6A
6A
F
Package
SC−59
(Pb−Free)
SC−59
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SC−70/SOT−323
(Pb−Free)
SC−75
(Pb−Free)
SOT−723
(Pb−Free)
SOT−1123
(Pb−Free)
Shipping
†
3000 / Tape & Reel
10000 / Tape & Reel
3000 / Tape & Reel
10000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
8000 / Tape & Reel
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
0
−50
(1) (2) (3) (4) (5)
(1) SC−75 and SC−70/SOT−323; Minimum Pad
(2) SC−59; Minimum Pad
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm
2
, 1 oz. copper trace
(5) SOT−723; Minimum Pad
−25
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
http://onsemi.com
2
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC−59) (MUN2111)
Total Device Dissipation
T
A
= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
P
D
230
338
1.8
2.7
540
370
264
287
−55
to +150
mW
mW/°C
°C/W
°C/W
°C
Symbol
Max
Unit
R
qJA
R
qJL
T
J
, T
stg
P
D
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−23) (MMUN2111L)
Total Device Dissipation
T
A
= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
246
400
2.0
3.2
508
311
174
208
−55
to +150
mW
mW/°C
°C/W
°C/W
°C
R
qJA
R
qJL
T
J
, T
stg
P
D
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5111)
Total Device Dissipation
T
A
= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
202
310
1.6
2.5
618
403
280
332
−55
to +150
mW
mW/°C
°C/W
°C/W
°C
R
qJA
R
qJL
T
J
, T
stg
P
D
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−75) (DTA114EE)
Total Device Dissipation
T
A
= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
200
300
1.6
2.4
600
400
−55
to +150
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
P
D
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−723) (DTA114EM3)
Total Device Dissipation
T
A
= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
260
600
2.0
4.8
480
205
−55
to +150
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
Junction and Storage Temperature Range
1.
2.
3.
4.
FR−4 @ Minimum Pad.
FR−4 @ 1.0 x 1.0 Inch Pad.
FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
http://onsemi.com
3
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SOT−1123) (NSBA114EF3)
Total Device Dissipation
T
A
= 25°C
(Note 3)
(Note 4)
Derate above 25°C
(Note 3)
(Note 4)
Thermal Resistance,
Junction to Ambient
(Note 3)
(Note 4)
P
D
254
297
2.0
2.4
493
421
193
−55
to +150
mW
mW/°C
°C/W
°C/W
°C
Symbol
Max
Unit
R
qJA
R
qJL
T
J
, T
stg
Thermal Resistance, Junction to Lead
(Note 3)
Junction and Storage Temperature Range
1.
2.
3.
4.
FR−4 @ Minimum Pad.
FR−4 @ 1.0 x 1.0 Inch Pad.
FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector−Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector−Emitter Breakdown Voltage (Note 5)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector−Emitter Saturation Voltage (Note 5)
(I
C
= 10 mA, I
B
= 0.3 mA)
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100
mA)
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 10 mA)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
h
FE
V
CE(sat)
V
i(off)
V
i(on)
V
OL
V
OH
R1
R
1
/R
2
35
−
−
2.5
−
4.9
7.0
0.8
60
−
1.2
1.8
−
−
10
1.0
−
0.25
0.8
−
0.2
−
13
1.2
Vdc
Vdc
Vdc
Vdc
Vdc
kW
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
−
−
−
50
50
−
−
−
−
−
100
500
0.5
−
−
nAdc
nAdc
mAdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
http://onsemi.com
4
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3
TYPICAL CHARACTERISTICS
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3
1
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
I
C
/I
B
= 10
T
A
=
−25°C
75°C
0.1
h
FE
, DC CURRENT GAIN
1000
V
CE
= 10 V
25°C
T
A
= 75°C
100
25°C
−25°C
0.01
0
20
40
60
80
10
1
I
C
, COLLECTOR CURRENT (mA)
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
vs. I
C
10
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
9
8
7
6
5
4
3
2
1
0
f = 10 kHz
l
E
= 0 A
T
A
= 25°C
100
10
Figure 3. DC Current Gain
75°C
25°C
T
A
=
−25°C
1
0.1
0.01
0.001
0
1
2
6
7
3
4
5
V
in
, INPUT VOLTAGE (V)
V
O
= 5 V
8
9
10
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
50
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
10
T
A
=
−25°C
25°C
75°C
1
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage vs. Output Current
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
