Ordering number : ENA1182A
ECH8308
SANYO Semiconductors
DATA SHEET
ECH8308
Features
•
•
•
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
•
•
Best suited for load switching
1.8V drive
Protection diode in
Low ON-resistance
Halogen free compliance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
×0.8mm)
2
Conditions
Ratings
--12
±10
--10
--40
1.6
150
-
-55 to +150
Unit
V
V
A
A
W
°C
°C
Package Dimensions
unit : mm (typ)
7011A-002
ECH8308-TL-H
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Top View
0.25
2.9
0.15
Packing Type : TL
5
0 t o 0.02
Marking
8
JK
TL
2.8
2.3
Lot No.
0.25
1
0.65
4
0.3
Electrical Connection
8
7
6
5
0.9
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
1
Bot t om View
2
3
4
0.07
SANYO : ECH8
http://semicon.sanyo.com/en/network
60612 TKIM/62508PE TIIM TC-00001486 No. A1182-1/7
ECH8308
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=--10A, VGS=0V
VDS=--6V, VGS=--4.5V, ID=--10A
See specified Test Circuit.
VDS=--6V, f=1MHz
Conditions
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
VGS=±8V, VDS=0V
VDS=--6V, ID=--1mA
VDS=--6V, ID=--4.5A
ID=--4.5A, VGS=--4.5V
ID=--2A, VGS=--2.5V
ID=--1A, VGS=--1.8V
Ratings
min
--12
-
-10
±10
--0.4
12
21
9.2
14
22
2300
720
550
24
130
230
195
26
4.0
7.1
-
-0.79
-
-1.2
12.5
20
33
-
-1.3
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
VDD= --6V
ID= --5A
RL=1.2Ω
VOUT
D
PW=10μs
D.C.≤1%
G
ECH8308
P.G
50Ω
S
Ordering Information
Device
ECH8308-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1182-2/7
ECH8308
--8.0V
--2.5V
--3.5V
--
1.8V
--10
--9
--8
ID -- VDS
--1.5V
--14
ID -- VGS
VDS=
--6V
--12
Drain Current, ID -- A
Drain Current, ID -- A
--6
--5
--4
--3
--2
--1
0
0
--0.1
--4.5V
--7
--10
--8
--6
Ta
=
--2
0
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--25
--1.4
--1.6
°
C
VGS= --1.2V
75
°
C
25
°
C
--4
--1.8
Drain-to-Source Voltage, VDS -- V
40
IT13601
35
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
IT13602
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- m
Ω
35
30
25
20
15
10
5
0
0
--3A
--5A
Static Drain-to-Source
On-State Resistance, RDS(on) -- m
Ω
ID= --1A
Ta=25
°
C
30
25
--1A
, I D=
-1.8V
-
V GS=
-3A
,I =-
--2.5V
D
V GS=
A
, I =
--5
=
--4.5V
D
V GS
20
15
10
5
0
--60
--1
--2
--3
--4
--5
--6
--7
--8
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
--0.01
IT13603
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
Ambient Temperature, Ta --
°C
IT13604
⏐
y
fs⏐ -- ID
IS -- VSD
VGS=0V
Forward Transfer Admittance,
⏐
y
fs⏐ -- S
VDS=
--6V
Ta
-25
=-
°
C
°
C
75
°
C
25
Source Current, IS -- A
--0.01
7
5
3
2
--0.001
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
2
1000
5 7 --10
IT13605
7
5
0
--0.2
Ta=
7
5
°
C
25
°
C
--25
°
C
--0.4
--0.6
--0.8
--1.0
--1.2
IT13606
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
VDD= --6V
VGS= --4.5V
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
7
5
3
2
3
Ciss
2
td(off)
tf
100
7
5
3
2
10
--0.01
1000
7
5
Coss
Crss
tr
td(on)
3
2
2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10
2
3
0
--2
--4
--6
--8
--10
--12
IT13608
Drain Current, ID -- A
IT13607
Drain-to-Source Voltage, VDS -- V
No. A1182-3/7
ECH8308
--4.5
--4.0
--3.5
VGS -- Qg
VDS=
--6V
ID=
--10A
Drain Current, ID -- A
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
ASO
IDP= --40A
PW≤10μs
Gate-to-Source Voltage, VGS -- V
1m
ID=
--10A
10
0m
s
10
s
m
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Operation in this
area is limited by RDS(on).
2
--0.1
--0.01
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm
2
✕0.8mm)
2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
Total Gate Charge, Qg -- nC
1.8
IT13609
PD -- Ta
When mounted on ceramic substrate
(900mm
2
✕0.8mm)
Drain-to-Source Voltage, VDS
C
D
op
n
io
at
er
s
a=
(T
)
°
C
25
5 7 --10 2 3
-- V
IT13610
Allowable Power Dissipation, PD -- W
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT13611
No. A1182-4/7
ECH8308
Embossed Taping Specification
ECH8308-TL-H
No. A1182-5/7
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