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ECH8308-TL-H

Description
POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size306KB,7 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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ECH8308-TL-H Overview

POWER, FET

ECH8308-TL-H Parametric

Parameter NameAttribute value
MakerSANYO
package instruction,
Reach Compliance Codeunknow
Ordering number : ENA1182A
ECH8308
SANYO Semiconductors
DATA SHEET
ECH8308
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Best suited for load switching
1.8V drive
Protection diode in
Low ON-resistance
Halogen free compliance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
×0.8mm)
2
Conditions
Ratings
--12
±10
--10
--40
1.6
150
-
-55 to +150
Unit
V
V
A
A
W
°C
°C
Package Dimensions
unit : mm (typ)
7011A-002
ECH8308-TL-H
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Top View
0.25
2.9
0.15
Packing Type : TL
5
0 t o 0.02
Marking
8
JK
TL
2.8
2.3
Lot No.
0.25
1
0.65
4
0.3
Electrical Connection
8
7
6
5
0.9
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
1
Bot t om View
2
3
4
0.07
SANYO : ECH8
http://semicon.sanyo.com/en/network
60612 TKIM/62508PE TIIM TC-00001486 No. A1182-1/7

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