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EGF1D

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size1MB,2 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
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EGF1D Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC

EGF1D Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionSMA, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit2 W
Diode typeSIGNAL DIODE
Maximum reverse recovery time0.0500 us
Maximum repetitive peak reverse voltage200 V
Maximum average forward current1 A
EGF1A THRU EGF1D
ULTRAFAST SURFACE MOUNT RECTIFIER
FEATURES
50V-200V 1.0A
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Ideal for surface mount automotive applications
High temperature metallurgically bonded construction
Superfast recovery times for high efficiency
Glass passivated cavity-free junction
Built-in strain relief
Easy pick and place
High temperature soldering guaranteed: 450°C/5 seconds
at terminals
Complete device submersible temperature of
265°C for 10 seconds in solder bath
MECHANICAL DATA
Case:
JEDEC DO-214BA molded plastic over glass body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.0048 ounces, 0.120 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
EGF1A
EGF1B
EGF1C
EGF1D
UNITS
Device Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=125°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
Typical reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied V
R
=4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas
EA
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
EB
100
70
100
1.0
EC
150
105
150
ED
200
140
200
Volts
Volts
Volts
Amps
I
FSM
V
F
I
R
t
rr
C
J
RΘJA
RΘJL
T
J
,T
STG
30.0
1.0
5.0
50.0
50.0
15.0
85.0
30.0
-65 to +175
Amps
Volts
µA
ns
pF
°C/W
°C
T
A
=25°C
T
A
=125°C
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

EGF1D Related Products

EGF1D EGF1A EGF1B EGF1C
Description 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214BA
state ACTIVE ACTIVE ACTIVE -
Diode type SIGNAL DIODE Signal diode SIGNAL DIODE -

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