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ENA1646A

Description
25 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size441KB,7 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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ENA1646A Overview

25 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET

ENA1646A Parametric

Parameter NameAttribute value
Number of terminals2
Minimum breakdown voltage30 V
Processing package descriptionHALOGEN AND LEAD FREE, ATPAK-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingTIN BISMUTH
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeP-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current25 A
Rated avalanche energy25 mJ
Maximum drain on-resistance0.0300 ohm
Maximum leakage current pulse75 A
Ordering number : ENA1646A
ATP101
SANYO Semiconductors
DATA SHEET
ATP101
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance
Slim package
Halogen free compliance
Large current
4.5V drive
Protection diode in
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10μs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
--30
±20
--25
-
-75
30
150
--55 to +150
25
-
-13
Unit
V
V
A
A
W
°C
°C
mJ
A
Note :
*1
VDD=-
-10V,
L=200
μ
H, IAV=--13A
*2
L
200
μ
H, Single pulse
Package Dimensions
unit : mm (typ)
7057-001
ATP101-TL-H
6.5
0.5
1.5
0.4
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP101
LOT No.
4
7.3
9.5
4.6
6.05
TL
Electrical Connection
4,2
0.55
0.7
0.5
1
0.8
2.3
2.3
3
0.6
1.7
2
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
1
0.1
3
http://semicon.sanyo.com/en/network
61312 TKIM/12710PA TKIM TC-00002233 No.A1646-1/7

ENA1646A Related Products

ENA1646A ATP101-TL-H ATP101_12
Description 25 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET 25 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET 25 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET
Number of terminals 2 - 2
Minimum breakdown voltage 30 V - 30 V
Processing package description HALOGEN AND LEAD FREE, ATPAK-3 - HALOGEN AND LEAD FREE, ATPAK-3
Lead-free Yes - Yes
EU RoHS regulations Yes - Yes
state ACTIVE - ACTIVE
packaging shape RECTANGULAR - RECTANGULAR
Package Size SMALL OUTLINE - SMALL OUTLINE
surface mount Yes - Yes
Terminal form GULL WING - GULL WING
terminal coating TIN BISMUTH - TIN BISMUTH
Terminal location SINGLE - SINGLE
Packaging Materials PLASTIC/EPOXY - PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Shell connection DRAIN - DRAIN
Number of components 1 - 1
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
Channel type P-CHANNEL - P-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT - ENHANCEMENT
Transistor type GENERAL PURPOSE POWER - GENERAL PURPOSE POWER
Maximum leakage current 25 A - 25 A
Rated avalanche energy 25 mJ - 25 mJ
Maximum drain on-resistance 0.0300 ohm - 0.0300 ohm
Maximum leakage current pulse 75 A - 75 A
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