Ordering number : ENA1646A
ATP101
SANYO Semiconductors
DATA SHEET
ATP101
Features
•
•
•
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
•
•
•
Low ON-resistance
Slim package
Halogen free compliance
Large current
4.5V drive
Protection diode in
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10μs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
--30
±20
--25
-
-75
30
150
--55 to +150
25
-
-13
Unit
V
V
A
A
W
°C
°C
mJ
A
Note :
*1
VDD=-
-10V,
L=200
μ
H, IAV=--13A
*2
L
≤
200
μ
H, Single pulse
Package Dimensions
unit : mm (typ)
7057-001
ATP101-TL-H
6.5
0.5
1.5
0.4
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP101
LOT No.
4
7.3
9.5
4.6
6.05
TL
Electrical Connection
4,2
0.55
0.7
0.5
1
0.8
2.3
2.3
3
0.6
1.7
2
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
1
0.1
3
http://semicon.sanyo.com/en/network
61312 TKIM/12710PA TKIM TC-00002233 No.A1646-1/7
ATP101
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=--25A, VGS=0V
VDS=--15V, VGS=--10V, ID=--25A
VDS=--10V, f=1MHz
Conditions
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--13A
ID=--13A, VGS=--10V
ID=--7A, VGS=--4.5V
Ratings
min
--30
--1
±10
--1.2
17
23
36
875
220
155
9.2
See specified Test Circuit.
70
80
70
18.5
3.2
4.0
-
-0.99
--1.5
30
51
-
-2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
0V
--10V
VIN
VDD= --15V
VIN
PW=10μs
D.C.≤1%
G
D
ID= --13A
RL=1.15Ω
VOUT
P.G
ATP101
50Ω
S
Ordering Information
Device
ATP101-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No.A1646-2/7
ATP101
--25
ID -- VDS
--6
.0V
Tc=25
°
C
--30
ID -- VGS
Tc=
--25
°
C
75
°
25
°
C
C
VDS= --10V
Single pulse
V
--1
0.0V
--8
.0V
--4
.5
V
--4.0V
Drain Current, ID -- A
--25
--20
Drain Current, ID -- A
--20
--15
--16.
0
VGS= --3.5V
--15
--10
--10
25
°
C
0
0
--0.5
--1.0
--1.5
--2.0
IT15312
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--2
5
--3.0
--3.5
°
C
--5
Tc=
7
--5
5
°
C
--4.0
--4.5
--5.0
Drain-to-Source Voltage, VDS -- V
80
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
80
RDS(on) -- Tc
IT15313
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
70
60
50
40
30
20
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Tc=25
°
C
Single pulse
Single pulse
70
60
50
40
30
20
10
0
--60
ID=
--7A
--13A
= --
, ID
4.5V
= --
V GS
7A
--13
,I
=
--10V
D
V GS=
A
10
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
5
|
y
fs
|
-- ID
IT15314
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
Case Temperature, Tc --
°
C
IT15315
IS -- VSD
Forward Transfer Admittance,
|
y
fs
|
-- S
VDS= --10V
3
2
VGS=0V
Single pulse
10
7
5
3
2
C
5
°
-2
-
=
Tc
°
C
75
Source Current, IS -- A
°
C
25
1.0
7
5
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
7
--0.01
7
5
3
2
--0.001
--0.2
--0.4
Tc=
7
--0.6
--25
°
C
--0.8
5
°
C
25
°
C
--1.0
--1.2
--1.4
IT15317
Drain Current, ID -- A
3
2
IT15316
3
2
SW Time -- ID
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
VDD= --15V
VGS= --10V
Ciss, Coss, Crss -- pF
td(off)
f=1MHz
Switching Time, SW Time -- ns
100
7
5
3
2
1000
Ciss
tf
tr
7
5
3
2
Coss
10
7
5
--0.1
2
3
5 7 --1.0
td(on)
100
Crss
2
3
5
7 --10
2
3
5
7
7
0
--5
--10
--15
--20
--25
--30
IT15319
Drain Current, ID -- A
IT15318
Drain-to-Source Voltage, VDS -- V
No.A1646-3/7
ATP101
--10
--9
VGS -- Qg
VDS= --15V
ID= --25A
Drain Current, ID -- A
2
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
ASO
IDP = -
-75A
ID = -
-25A
PW≤10μs
1
0
μ
s
10
0
μ
s
1m
s
s
Gate-to-Source Voltage, VGS -- V
--8
--7
--6
--5
--4
--3
--2
--1
0
0
2
4
6
8
10
12
14
16
18
20
10
m
DC
op
s
0m
10
Operation in
this area is
limited by R DS (on).
er
ati
on
--0.1
--0.1
Tc=25°C
Single pulse
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
Total Gate Charge, Qg -- nC
35
PD -- Tc
IT15320
120
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
IT15321
Allowable Power Dissipation, PD -- W
30
25
20
15
10
5
0
Avalanche Energy derating factor -- %
100
80
60
40
20
0
20
40
60
80
100
120
140
160
0
0
25
50
75
100
125
150
175
IT10478
Case Temperature, Tc --
°C
IT15322
Ambient Temperature, Ta --
°C
No.A1646-4/7
ATP101
Taping Specification
ATP101-TL-H
No.A1646-5/7
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