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3LN01SS_12

Description
General-Purpose Switching Device Applications
File Size525KB,7 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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3LN01SS_12 Overview

General-Purpose Switching Device Applications

Ordering number : EN6546B
3LN01SS
SANYO Semiconductors
DATA SHEET
3LN01SS
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Conditions
Ratings
30
±10
0.15
0.6
0.15
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
*
Machine Model
Package Dimensions
unit : mm (typ)
7029A-003
1.4
0.3
0.25
3
0 to 0.02
0.1
Product & Package Information
• Package
: SSFP
• JEITA, JEDEC
: SC-81
• Minimum Packing Quantity : 8,000 pcs./reel
3LN01SS-TL-E
3LN01SS-TL-H
Packing Type: TL
Marking
1.4
0.8
LOT No.
LOT No.
0.3
1
2
YA
0.45
0.6
0.2
TL
Electrical Connection
1
2
0.07
1 : Gate
2 : Source
3 : Drain
SANYO : SSFP
1
3
0.07
3
2
http://semicon.sanyo.com/en/network
62712 TKIM/32406PE MSIM TB-00002158/52200 TSIM TA-1986 No.6546-1/7

3LN01SS_12 Related Products

3LN01SS_12 3LN01SS-TL-E 3LN01SS-TL-H EN6546B
Description General-Purpose Switching Device Applications General-Purpose Switching Device Applications General-Purpose Switching Device Applications General-Purpose Switching Device Applications
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