DE36C32-55 datasheet, PDF - EEWORLD Datasheet

DE36C32-55: DescriptionEEPROM, 4KX8, 55ns, Parallel, CMOS, CDIP24; Categorystorage storage; File Size145KB，6 Pages; ManufacturerLSC/CSI; Websitehttps://lsicsi.com

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DE36C32-55 Overview

EEPROM, 4KX8, 55ns, Parallel, CMOS, CDIP24

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	LSC/CSI
package instruction	DIP, DIP24,.3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	55 ns
Other features	DATA RETENTION > 10 YEARS
command user interface	NO
Data polling	NO
Data retention time - minimum	10
JESD-30 code	R-GDIP-T24
JESD-609 code	e0
memory density	32768 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	24
word count	4096 words
character code	4000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4KX8
Output characteristics	3-STATE
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum standby current	0.08 A
Maximum slew rate	0.08 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO

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