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FM25V20-DGTR

Description
SPECIALTY MEMORY CIRCUIT, PDSO8
Categorystorage   
File Size427KB,17 Pages
ManufacturerRamtron International Corporation (Cypress Semiconductor Corporation)
Websitehttp://www.cypress.com/
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FM25V20-DGTR Overview

SPECIALTY MEMORY CIRCUIT, PDSO8

FM25V20-DGTR Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage3.6 V
Minimum supply/operating voltage2 V
Rated supply voltage3.3 V
Processing package description5 × 6 MM, 1.27 MM PITCH, GREEN, TDFN-8
stateACTIVE
CraftsmanshipCMOS
packaging shapeRectangle
Package SizeSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
surface mountYes
Terminal formNO
Terminal spacing1.27 mm
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
Temperature levelINDUSTRIAL
memory width8
organize256K × 8
storage density2.10E6 deg
operating modeSynchronize
Number of digits262144 words
Number of digits256K
Memory IC typememory circuit
FM25V20
2Mb Serial 3V F-RAM Memory
Features
2M bit Ferroelectric Nonvolatile RAM
Organized as 256K x 8 bits
High Endurance 100 Trillion (10
14
) Read/Writes
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 40 MHz Frequency
Direct Hardware Replacement for Serial Flash
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Device ID
Device ID reads out Manufacturer ID & Part ID
Low Voltage, Low Power
Low Voltage Operation 2.0V – 3.6V
100
A
Standby Current (typ.)
3
A
Sleep Mode Current (typ.)
Industry Standard Configurations
Industrial Temperature -40C to +85C
8-pin “Green”/RoHS EIAJ SOIC Package
8-pin “Green”/RoHS TDFN Package
8-pin “Green”/POHS PDIP Package
Description
The FM25V20 is a 2-megabit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by Serial
Flash and other nonvolatile memories.
Unlike Serial Flash, the FM25V20 performs write
operations at bus speed. No write delays are incurred.
Data is written to the memory array immediately
after it has been transferred to the device. The next
bus cycle may commence without the need for data
polling. The product offers very high write
endurance, orders of magnitude more endurance than
Serial Flash. Also, F-RAM exhibits lower power
consumption than Serial Flash.
These capabilities make the FM25V20 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding controls
where the long write time of Serial Flash can cause
data loss.
The FM25V20 provides substantial benefits to users
of Serial Flash as a hardware drop-in replacement.
The device uses the high-speed SPI bus, which
enhances the high-speed write capability of F-RAM
technology. The device incorporates a read-only
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Device ID that allows the host to determine the
manufacturer, product density, and product revision.
The device is guaranteed over an industrial
temperature range of -40°C to +85°C.
Pin Configuration
Top View
/S
Q
/W
VSS
1
2
3
4
8
7
6
5
VDD
/HOLD
C
D
S
Q
W
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
C
D
Pin Name
/S
/W
/HOLD
C
D
Q
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 3.0
August 2012
Page 1 of 17

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Description SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8
Number of functions 1 1 1 1 1 1
Number of terminals 8 8 8 8 8 8
Maximum operating temperature 85 Cel 85 Cel 85 Cel 85 Cel 85 Cel 85 Cel
Minimum operating temperature -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel
Maximum supply/operating voltage 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply/operating voltage 2 V 2 V 2 V 2 V 2 V 2 V
Rated supply voltage 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
Processing package description 5 × 6 MM, 1.27 MM PITCH, GREEN, TDFN-8 5 X 6 MM, 1.27 MM PITCH, GREEN, TDFN-8 5 X 6 MM, 1.27 MM PITCH, GREEN, TDFN-8 Green, EAIJ SOIC-8 Green, EAIJ SOIC-8 5 X 6 MM, 1.27 MM PITCH, GREEN, TDFN-8
state ACTIVE TRANSFERRED TRANSFERRED TRANSFERRED TRANSFERRED TRANSFERRED
packaging shape Rectangle RECTANGULAR RECTANGULAR Rectangle Rectangle RECTANGULAR
Package Size SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
surface mount Yes Yes Yes Yes Yes Yes
Terminal form NO NO LEAD NO LEAD GULL WING GULL WING NO LEAD
Terminal spacing 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location pair DUAL DUAL pair pair DUAL
Packaging Materials Plastic/Epoxy PLASTIC/EPOXY PLASTIC/EPOXY Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
memory width 8 8 8 8 8 8
organize 256K × 8 256K X 8 256K X 8 256K × 8 256K × 8 256K X 8
storage density 2.10E6 deg 2.10E6 deg 2.10E6 deg 2.10E6 deg 2.10E6 deg 2.10E6 deg
operating mode Synchronize SYNCHRONOUS SYNCHRONOUS Synchronize Synchronize SYNCHRONOUS
Memory IC type memory circuit MEMORY CIRCUIT MEMORY CIRCUIT memory circuit memory circuit MEMORY CIRCUIT
Number of digits 256K 256K 256K 256K 256K 256K
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