FM25V20-GTR datasheet, PDF - EEWORLD Datasheet

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FM25V20-GTR: DescriptionSPECIALTY MEMORY CIRCUIT, PDSO8; Categorystorage; File Size427KB，17 Pages; ManufacturerRamtron International Corporation (Cypress Semiconductor Corporation); Websitehttp://www.cypress.com/

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FM25V20-GTR Overview

SPECIALTY MEMORY CIRCUIT, PDSO8

FM25V20-GTR Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	8
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	3.6 V
Minimum supply/operating voltage	2 V
Rated supply voltage	3.3 V
Processing package description	Green, EAIJ SOIC-8
state	TRANSFERRED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal spacing	1.27 mm
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Temperature level	INDUSTRIAL
memory width	8
organize	256K × 8
storage density	2.10E6 deg
operating mode	Synchronize
Number of digits	262144 words
Number of digits	256K
Memory IC type	memory circuit

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FM25V20

2Mb Serial 3V F-RAM Memory

Features

2M bit Ferroelectric Nonvolatile RAM



Organized as 256K x 8 bits



High Endurance 100 Trillion (10

) Read/Writes



10 Year Data Retention



NoDelay™ Writes



Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI



Up to 40 MHz Frequency



Direct Hardware Replacement for Serial Flash



SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme



Hardware Protection



Software Protection

Device ID



Device ID reads out Manufacturer ID & Part ID

Low Voltage, Low Power



Low Voltage Operation 2.0V – 3.6V



100

A

Standby Current (typ.)



A

Sleep Mode Current (typ.)

Industry Standard Configurations



Industrial Temperature -40C to +85C



8-pin “Green”/RoHS EIAJ SOIC Package



8-pin “Green”/RoHS TDFN Package



8-pin “Green”/POHS PDIP Package

Description

The FM25V20 is a 2-megabit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 10 years

while eliminating the complexities, overhead, and

system level reliability problems caused by Serial

Flash and other nonvolatile memories.

Unlike Serial Flash, the FM25V20 performs write

operations at bus speed. No write delays are incurred.

Data is written to the memory array immediately

after it has been transferred to the device. The next

bus cycle may commence without the need for data

polling. The product offers very high write

endurance, orders of magnitude more endurance than

Serial Flash. Also, F-RAM exhibits lower power

consumption than Serial Flash.

These capabilities make the FM25V20 ideal for

nonvolatile memory applications requiring frequent

or rapid writes or low power operation. Examples

range from data collection, where the number of

write cycles may be critical, to demanding controls

where the long write time of Serial Flash can cause

data loss.

The FM25V20 provides substantial benefits to users

of Serial Flash as a hardware drop-in replacement.

The device uses the high-speed SPI bus, which

enhances the high-speed write capability of F-RAM

technology. The device incorporates a read-only

This product conforms to specifications per the terms of the Ramtron

standard warranty. The product has completed Ramtron’s internal

qualification testing and has reached production status.

Device ID that allows the host to determine the

manufacturer, product density, and product revision.

The device is guaranteed over an industrial

temperature range of -40°C to +85°C.

Pin Configuration

Top View

VSS

VDD

/HOLD

VSS

VDD

HOLD

Pin Name

/HOLD

VDD

VSS

Function

Chip Select

Write Protect

Hold

Serial Clock

Serial Data Input

Serial Data Output

Supply Voltage

Ground

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

http://www.ramtron.com

Rev. 3.0

August 2012

Page 1 of 17

FM25V20-GTR Related Products

	FM25V20-GTR	FM25V20	FM25V20-DG	FM25V20-DGTR	FM25V20-G	FM25V20-PG
Description	SPECIALTY MEMORY CIRCUIT, PDSO8	SPECIALTY MEMORY CIRCUIT, PDSO8	SPECIALTY MEMORY CIRCUIT, PDSO8	SPECIALTY MEMORY CIRCUIT, PDSO8	SPECIALTY MEMORY CIRCUIT, PDSO8	SPECIALTY MEMORY CIRCUIT, PDSO8
Number of functions	1	1	1	1	1	1
Number of terminals	8	8	8	8	8	8
Maximum operating temperature	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel
Minimum operating temperature	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel
Maximum supply/operating voltage	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply/operating voltage	2 V	2 V	2 V	2 V	2 V	2 V
Rated supply voltage	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Processing package description	Green, EAIJ SOIC-8	5 X 6 MM, 1.27 MM PITCH, GREEN, TDFN-8	5 X 6 MM, 1.27 MM PITCH, GREEN, TDFN-8	5 × 6 MM, 1.27 MM PITCH, GREEN, TDFN-8	Green, EAIJ SOIC-8	5 X 6 MM, 1.27 MM PITCH, GREEN, TDFN-8
state	TRANSFERRED	TRANSFERRED	TRANSFERRED	ACTIVE	TRANSFERRED	TRANSFERRED
packaging shape	Rectangle	RECTANGULAR	RECTANGULAR	Rectangle	Rectangle	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
surface mount	Yes	Yes	Yes	Yes	Yes	Yes
Terminal form	GULL WING	NO LEAD	NO LEAD	NO	GULL WING	NO LEAD
Terminal spacing	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	pair	DUAL	DUAL	pair	pair	DUAL
Packaging Materials	Plastic/Epoxy	PLASTIC/EPOXY	PLASTIC/EPOXY	Plastic/Epoxy	Plastic/Epoxy	PLASTIC/EPOXY
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
memory width	8	8	8	8	8	8
organize	256K × 8	256K X 8	256K X 8	256K × 8	256K × 8	256K X 8
storage density	2.10E6 deg	2.10E6 deg	2.10E6 deg	2.10E6 deg	2.10E6 deg	2.10E6 deg
operating mode	Synchronize	SYNCHRONOUS	SYNCHRONOUS	Synchronize	Synchronize	SYNCHRONOUS
Memory IC type	memory circuit	MEMORY CIRCUIT	MEMORY CIRCUIT	memory circuit	memory circuit	MEMORY CIRCUIT
Number of digits	256K	256K	256K	256K	256K	256K

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