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GBU1006

Description
3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size188KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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GBU1006 Overview

3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

GBU1001-GBU1007
Single Phase10.0AMP.Glass Passivated Bridge Rectifiers
GBU
Features
Ideal for printed circuit board
Reliable low cost construction
Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
High case dielectric strength of 1500VRMS
Surge overload rating to 200 amperes peak
High temperature soldering guaranteed:
260
o
C / 10 seconds / .375”, (9.5mm) lead
lengths.
Mechanical Data
Case: Molded plastic body.
Weight: 0. 3 ounce, 8.0 grams
Mounting torque: 5 in. lb. Max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
C
= 100
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 5.0A
@ 10A
Maximum DC Reverse Current @ T
A
=25 C
at Rated DC Blocking Voltage @ T
A
=125
o
C
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance Per Leg ( Note 1 )
( Note 2 )
o
Symbol GBU GBU GBU GBU GBU GBU GBU
Units
1001 1002 1003 1004 1005 1006 1007
V
RRM
50
100 200 400 600 800 1000
V
V
RMS
35
70
140 280 420 560 700
V
V
DC
50
100 200 400 600 800 1000
V
I
(AV)
I
FSM
10.0
220
A
A
V
F
I
R
Cj
R
θJA
R
θJC
T
J
1.0
1.1
5.0
500
211
21
2.0
-55 to +150
-55 to + 150
94
o
V
uA
uA
pF
C/W
o
o
Operating Temperature Range
Storage Temperature Range
T
STG
Notes 1: Units Mounted In Free Air No Heat Sink On PCB 0.5”x 0.5 “ (12mm x 12mm) Copper Pads,
0.375”(9.5mm) Lead Length.
2: Device Mounted on 4” x 6” x 0.25” Plate Heatsink.
3. Measured at 1.0 MHZ and applied Reverse Voltage of 4.0V.
C
C
http://www.luguang.cn
mail:lge@luguang.cn

GBU1006 Related Products

GBU1006 GBU1001 GBU1002 GBU1003 GBU1004 GBU1005 GBU1007
Description 3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
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