DC1803-RING datasheet, PDF - EEWORLD Datasheet

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DC1803-RING: DescriptionMixer Diode, Zero Barrier, X Band to K Band, Silicon; CategoryDiscrete semiconductor diode; File Size41KB，2 Pages; ManufacturerDynex; Websitehttp://www.dynexsemi.com/

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DC1803-RING Overview

Mixer Diode, Zero Barrier, X Band to K Band, Silicon

DC1803-RING Parametric

Parameter Name	Attribute value
Maker	Dynex
package instruction	S-CQMW-F4
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	2.5 V
Configuration	RING, 4 ELEMENTS
Maximum diode capacitance	0.05 pF
Diode component materials	SILICON
Diode type	MIXER DIODE
Maximum forward voltage (VF)	0.35 V
frequency band	X BAND TO K BAND
JESD-30 code	S-CQMW-F4
Number of components	4
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	SQUARE
Package form	MICROWAVE
Pulse input maximum power	0.5 W
Minimum pulse input power	100 W
Certification status	Not Qualified
surface mount	YES
technology	PLANAR DOPED BARRIER
Terminal form	FLAT
Terminal location	QUAD
Schottky barrier type	ZERO BARRIER

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	DC1803-RING	DC1804-RING	DC1802-BRIDGE	DC1802-RING	DC1801-BRIDGE	DC1805	DC1804-BRIDGE	DC1803-BRIDGE	DC1806	DC1801-RING
Description	Mixer Diode, Zero Barrier, X Band to K Band, Silicon	Mixer Diode, Zero Barrier, X Band to K Band, Silicon	Mixer Diode, Zero Barrier, X Band to K Band, Silicon	Mixer Diode, Zero Barrier, X Band to K Band, Silicon	Mixer Diode, Zero Barrier, X Band to K Band, Silicon	Mixer Diode, Zero Barrier, X Band to K Band, Silicon	Mixer Diode, Zero Barrier, X Band to K Band, Silicon	Mixer Diode, Zero Barrier, X Band to K Band, Silicon	Mixer Diode, Zero Barrier, X Band to K Band, Silicon	Mixer Diode, Zero Barrier, X Band to K Band, Silicon
package instruction	S-CQMW-F4	S-CQMW-F4	R-CDMW-F4	R-CDMW-F4	R-CDMW-F4	R-CTMW-F3	S-CQMW-F4	S-CQMW-F4	R-CTMW-F3	R-CDMW-F4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Configuration	RING, 4 ELEMENTS	RING, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	RING, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	RING, 4 ELEMENTS
Maximum diode capacitance	0.05 pF	0.05 pF	0.05 pF	0.05 pF	0.05 pF	0.05 pF	0.05 pF	0.05 pF	0.05 pF	0.05 pF
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	MIXER DIODE	MIXER DIODE	MIXER DIODE	MIXER DIODE	MIXER DIODE	MIXER DIODE	MIXER DIODE	MIXER DIODE	MIXER DIODE	MIXER DIODE
Maximum forward voltage (VF)	0.35 V	0.35 V	0.35 V	0.35 V	0.35 V	0.35 V	0.35 V	0.35 V	0.35 V	0.35 V
frequency band	X BAND TO K BAND	X BAND TO K BAND	X BAND TO K BAND	X BAND TO K BAND	X BAND TO K BAND	X BAND TO K BAND	X BAND TO K BAND	X BAND TO K BAND	X BAND TO K BAND	X BAND TO K BAND
JESD-30 code	S-CQMW-F4	S-CQMW-F4	R-CDMW-F4	R-CDMW-F4	R-CDMW-F4	R-CTMW-F3	S-CQMW-F4	S-CQMW-F4	R-CTMW-F3	R-CDMW-F4
Number of components	4	4	4	4	4	2	4	4	2	4
Number of terminals	4	4	4	4	4	3	4	4	3	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	SQUARE	SQUARE	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	SQUARE	SQUARE	RECTANGULAR	RECTANGULAR
Package form	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE
Pulse input maximum power	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W
Minimum pulse input power	100 W	100 W	100 W	100 W	100 W	100 W	100 W	100 W	100 W	100 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	PLANAR DOPED BARRIER	PLANAR DOPED BARRIER	PLANAR DOPED BARRIER	PLANAR DOPED BARRIER	PLANAR DOPED BARRIER	PLANAR DOPED BARRIER	PLANAR DOPED BARRIER	PLANAR DOPED BARRIER	PLANAR DOPED BARRIER	PLANAR DOPED BARRIER
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	QUAD	QUAD	DUAL	DUAL	DUAL	TRIPLE	QUAD	QUAD	TRIPLE	DUAL
Schottky barrier type	ZERO BARRIER	ZERO BARRIER	ZERO BARRIER	ZERO BARRIER	ZERO BARRIER	ZERO BARRIER	ZERO BARRIER	ZERO BARRIER	ZERO BARRIER	ZERO BARRIER
Base Number Matches	-	1	1	1	1	1	1	-	-	-

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