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FR207G

Description
2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size169KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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FR207G Overview

2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15

FR207G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingNOT SPECIFIED
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum reverse recovery time0.5000 us
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current2 A
Maximum non-repetitive peak forward current70 A
FR201G-FR207G
2.0AMP. Glass Passivated Fast Recovery Rectifiers
DO-15
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
o
260 C /10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs.,(2.3kg) tension
Mounting position: Any
Weight: 0.40 gram
Dimensions in inches and (millimeters)
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings and Electrical Characteristics
o
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
o
@T
A
= 55 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 2.0A
o
Maximum DC Reverse Current @ T
A
=25
C
o
at Rated DC Blocking Voltage @ T
A
=125
C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance
Operating Temperature Range
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
FR
FR
FR
FR
FR
FR
FR
Units
201G 202G 203G 204G 205G 206G 207G
50
35
50
100
70
100
200
140
200
400
280
400
2.0
55
1.3
600
420
600
800 1000
560 700
800 1000
V
V
V
A
A
V
uA
uA
nS
pF
o
150
5.0
100
Storage Temperature Range
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 10mm x 10mm on P.C.B.
20
60
-65 to +150
-65 to +150
250
500
C/W
o
C
o
C
http://www.luguang.cn
mail:lge@luguang.cn

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Description 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-15

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