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GBPC3501

Description
35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size155KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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GBPC3501 Overview

35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

GBPC3500-GBPC3510
Silicon Bridge Rectifiers
PRV : 50 - 1000 Volts
Io : 35 Amperes
BR-35
0.728(18.50)
0.688(17.40)
Features
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
0.570(14.50)
0.530(13.40)
0.685(16.70) 1.130(28.70)
0.618(15.70) 1 120(28 40)
0.658(16.70)
0.618(15.70)
0.028(0.71)
0.024(0.61)
0.197(5.00)
0.193(4.90)
0.252(6.40)
0.248(6.30)
φ
0.094(2.40)
0.087(2.20)
1.141 (29.0)
1.063 (27.0)
Mechanical Data
Case : Metal Case
Epoxy : UL94V-O rate flame retardant
Terminals : plated .25" (6.35 mm). Faston
Polarity : Polarity symbols marked on case
Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
Weight : 15.6 grams
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.325 (8.25)
0.309 (7.85)
Dimensions in inches and ( millimeters )
Maximum Ratings and Electrical Characteristics
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55
°
C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at I
F
= 17.5 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Typical Thermal Resistance at Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Ta = 25
°
C
Ta = 100
°
C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
R
θ
JC
R
θ
JA
T
J
T
STG
GBPC
3500
50
35
50
GBPC
3501
100
70
100
GBPC
3502
200
140
200
GBPC
3504
400
280
400
35
400
660
1.1
10
200
1.5
10
GBPC
3506
600
420
600
GBPC
3508
800
560
800
GBPC
3510
1000
700
1000
UNIT
V
V
V
A
A
A
2
S
V
μA
μA
°C/W
°C
°C
°C
- 40 to + 150
- 40 to + 150
Note :
(1) Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
http://www.luguang.cn
mail:lge@luguang.cn

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Description 35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

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