D
TO-254
G
S
APT1004RCN 1000V 3.6A 4.00
Ω
TM
POWER MOS IV
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: T
C
= 25°C unless otherwise specified.
APT1004RCN
UNIT
Volts
Amps
1000
3.6
14.4
±30
125
1.0
-55 to 150
300
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
1
Volts
Watts
W/°C
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
1000
3.6
4.00
250
1000
±100
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D
[Cont.])
Ohms
µA
nA
Volts
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
=
±30V,
V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
4
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
SOA2
I
LM
Characteristic
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
Test Conditions
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec.
I
DS
= I
D
[Cont.], V
DS
= P
D
/ I
D
[Cont.], t = 1 Sec.
MIN
TYP
MAX
UNIT
Watts
125
125
3.6
Amps
050-0017 Rev C
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
APT Website - http://www.advancedpower.com
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol
C
DC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
f = 1 MHz
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 1.8Ω
MIN
TYP
APT1004RCN
MAX
UNIT
15
805
115
37
35
4.3
18
10
12
33
16
22
950
pF
160
60
55
7
27
20
24
ns
50
nC
32
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
1
2
MIN
TYP
MAX
UNIT
Amps
Volts
ns
µC
3.6
14.4
1.3
290
1.65
580
3.3
(Body Diode)
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/µs)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/µs)
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
1
2
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
W/°C
1.00
50
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
Pulse Test: Pulse width < 380
µS,
Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
1.0
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.5
D=0.5
0.2
0.1
0.05
0.02
0.01
0.01
0.005
SINGLE PULSE
Note:
PDM
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θJC
+ TC
0.1
0.05
050-0017 Rev C
0.001
10
-5
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4
APT1004RCN
5
VGS=5.5V,6V &10V
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
4
5V
8
VGS=10V
6V
5V
6
5.5V
3
4.5V
4
4.5V
2
2
4V
0
1
4V
0
100
200
300
400
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
0
4
8
12
16
20
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
2.5
V
GS
20
TJ = -55°C
I
D
, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
230µ SEC. PULSE TEST
TJ = +25°C
TJ = +125°C
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
2.0
15
1.5
VGS=10V
VGS=20V
10
1.0
5
TJ = +125°C
TJ = +25°C
0
TJ = -55°C
0.5
0
2
4
6
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
4
I
D
, DRAIN CURRENT (AMPERES)
0.0
0
2
4
6
8
10
12
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
25
I = 0.5 I [Cont.]
D
D
GS
1.2
1.1
3
1.0
2
0.9
1
0.8
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
2.5
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
V
= 10V
0
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
0.7
-50
2.0
1.2
1.5
1.0
1.0
0.8
0.5
0.6
050-0017 Rev C
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.4
-50
APT1004RCN
20
10µS
I
D
, DRAIN CURRENT (AMPERES)
10
5
OPERATION HERE
LIMITED BY R
(ON)
DS
10,000
100µS
C, CAPACITANCE (pF)
Ciss
1,000
1mS
1
0.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
0.1
10mS
Coss
100
Crss
100mS
DC
10
1
5 10
50 100
500 1000
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D
D
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
100
50
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
16
VDS=100V
12
VDS=200V
20
TJ =+150°C
10
5
TJ =+25°C
8
VDS=500V
4
2
1
20
40
60
80
100
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0
0.5
1.0
1.5
2.0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-254AA Package Outline
13.84 (.545)
13.59 (.535)
1.27 (.050)
1.02 (.040)
6.91 (.272)
6.81 (.268)
3.78 (.149) Dia.
3.53 (.139)
20.32 (.800)
20.06 (.790)
13.84 (.545)
13.59 (.535)
17.40 (.685)
16.89 (.665)
31.37 (1.235)
30.35 (1.195)
Drain
Source
Gate
3.81 (.150) BSC
6.60 (.260)
6.32 (.249)
1.14 (.045) Dia. Typ.
.89 (.035) 3 Leads
3.81 (.150) BSC
050-0017 Rev C
Dimensions in Millimeters and (Inches)
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