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DB101S

Description
BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size147KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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DB101S Overview

BRIDGE RECTIFIER DIODE

DB101S-DB107S
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
Features
Rating to 1000V PRV
1± 0.1
DB-S
Surge overload rating to 30 Amperes peak
6.3± 0.2
7.9± 0.2
8.3± 0.3
6.4± 0.1
0.3
1.2± 0.3
10± 0.6
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
8.3± 0.1
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
Plastic material has UL flammability classification
94V-O
Polarity symbols molded on body
Weight: 0.016 ounces,0.45 grams
Dimensions in millimeters
3.2±
0.2
5± 0.2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
DB
101S
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=40
DB
102S
100
70
100
DB
103S
200
140
200
DB
104S
400
280
400
1.0
DB
105S
600
420
600
DB
106S
800
560
800
DB
107S
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 1.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
30.0
A
V
F
I
R
T
J
T
STG
1.1
10.0
1.0
- 55 ---- + 150
- 55 ---- + 150
V
μ
A
mA
Operating junction temperature range
Storage temperature range
http://www.luguang.cn
mail:lge@luguang.cn

DB101S Related Products

DB101S DB103S
Description BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE

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