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DB157

Description
1.5 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    Ordinary rectifier bridge   
File Size143KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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1.5 A, SILICON, BRIDGE RECTIFIER DIODE

DB157 Parametric

Parameter NameAttribute value
PackageDB
Maximum recurrent peak reverse voltage1000
Maximum average forward rectified curre0.7
Peak forward surge curre60
Maximum instantaneous forward voltage1
Maximum reverse curre5
TJ(℃)-55~+150
DB151-DB157
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.5 A
Features
Rating to 1000V PRV
1± 0.1
DB - 1
Surge overload rating to
40
Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
8.3± 0.1
6.3± 0.2
8.3± 0.3
8.8± 0.5
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
Plastic material has UL flammability classification
94V-O
Polarity symbols molded on body
Weight: 0.016 ounces,0.45 grams
Dimensions in millimeters
5± 0.2
2.5± 0.15
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
DB151 DB152 DB153 DB154 DB155 DB156 DB157 UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=25
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.5
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 1.5 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
40.0
A
V
F
I
R
T
J
T
STG
1.1
5.0
0.5
- 55 ---- + 150
- 55 ---- + 150
V
μ
A
mA
Operating junction temperature range
Storage temperature range
http://www.luguang.cn
mail:lge@luguang.cn

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