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DB151

Description
BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size143KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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DB151 Overview

BRIDGE RECTIFIER DIODE

DB151 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeBRIDGE RECTIFIER DIODE
DB151-DB157
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.5 A
Features
Rating to 1000V PRV
1± 0.1
DB - 1
Surge overload rating to
40
Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
8.3± 0.1
6.3± 0.2
8.3± 0.3
8.8± 0.5
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
Plastic material has UL flammability classification
94V-O
Polarity symbols molded on body
Weight: 0.016 ounces,0.45 grams
Dimensions in millimeters
5± 0.2
2.5± 0.15
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
DB151 DB152 DB153 DB154 DB155 DB156 DB157 UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=25
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.5
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 1.5 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
40.0
A
V
F
I
R
T
J
T
STG
1.1
5.0
0.5
- 55 ---- + 150
- 55 ---- + 150
V
μ
A
mA
Operating junction temperature range
Storage temperature range
http://www.luguang.cn
mail:lge@luguang.cn

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