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DBLS156G

Description
1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size297KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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DBLS156G Overview

1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

DBL(S)151G - DBL(S)159G
Single Phase 1.5 AMP. Glass Passivated Bridge Rectifiers
DBL
Features
Glass passivated junction
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique
High surge current capability
High temperature soldering guaranteed:
260
o
C / 10 seconds at 5 lbs., ( 2.3 kg )
tension
Small size, simple installation
DBLS
Dimensions in inches and (millimeters)
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings and Electrical Characteristics
Type Number
DBL DBL DBL DBL DBL DBL DBL DBL DBL
151G 152G 153G 154G 155G 156G 157G 158G 159G
DBLS DBLS DBLS DBLS DBLS DBLS DBLS DBLS DBLS
151G 152G 153G 154G 155G 156G 157G 158G 159G
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
@T
A
= 40 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.5A
Maximum DC Reverse Current
@ T
A
=25
o
C at Rated DC Blocking Voltage
@ T
A
=125
o
C
Typical Thermal Resistance (Note)
50
35
50
100 200
70
140
100 200
400 600 800 1000 1200 1400
280 420 560
700 840 980
400 600 800 1000 1200 1400
V
V
V
A
A
1.5
50
1.1
1.25
V
uA
uA
o
5
500
R
θJA
40
R
θJL
15
Operating Temperature Range
T
J
-55 to +150
Storage Temperature Range
T
STG
-55 to +150
Note: Thermal resistance from Junction to Ambient and from Junction to Lead Mounted on
P.C.B. with 0.4” x 0.4”” (10mm x 10mm) Copp
er Pads.
C/W
o
o
C
C
http://www.luguang.cn
mail:lge@luguang.cn
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