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DF10M

Description
BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1KV V(RRM),DIP
Categorysemiconductor    Discrete semiconductor   
File Size129KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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DF10M Overview

BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1KV V(RRM),DIP

DF10M Parametric

Parameter NameAttribute value
stateCONSULT MFR
Diode typebridge rectifier diode
DF005M-DF10M
Glass Passivated Bridge Rectifiers
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.0
Amperes
Features
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability.
Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
Lead Pb/Sn copper
The plastic material has UL flammability classification
94V-0
DB-1
1± 0.1
8.3± 0.1
Mechanical Data
Polarity : As marked on Body
Weight : 0.02 ounces, 0.38 grams
Mounting position : Any
5± 0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
DF08M DF10M
UNIT
800
560
800
1000
700
1000
V
V
V
A
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
SYMBOL
DF005M DF01M
DF02M
200
140
200
DF04M
400
280
400
1.0
50
1.1
10
500
10.4
25
40
2.5± 0.15
6.3± 0.2
DF06M
600
420
600
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
@T
A
=
40 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I t Rating for fusing (t < 8.3ms)
Typical Junction
Capacitance per element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
2
8.3± 0.3
8.8± 0.5
I
FSM
V
F
I
R
I t
C
J
R
0JA
2
A
V
uA
AS
pF
C/W
2
@T
J
=25 C
@T
J
=125 C
T
J
T
STG
-55 to +150
-55 to +150
C
C
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal resistance from junction to ambient mounted on P.C.B
with 0.5x0.5"(13x13mm) copper pads.
http://www.luguang.cn
mail:lge@luguang.cn

DF10M Related Products

DF10M DF005M DF01M DF02M DF04M DF06M DF08M
Description BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1KV V(RRM),DIP 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
state CONSULT MFR - DISCONTINUED ACTIVE ACTIVE ACTIVE -
Diode type bridge rectifier diode - bridge rectifier diode BRIDGE RECTIFIER DIODE bridge rectifier diode bridge rectifier diode -
Number of terminals - - 4 4 4 4 -
Number of components - - 4 4 4 4 -
Maximum average input current - - 1 A 1 A 1 A 1 A -
packaging shape - - Rectangle RECTANGULAR Rectangle Rectangle -
Package Size - - IN-line IN-LINE IN-line IN-line -
Terminal form - - THROUGH-hole THROUGH-HOLE THROUGH-hole THROUGH-hole -
Terminal location - - pair DUAL pair pair -
Packaging Materials - - Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy Plastic/Epoxy -
structure - - Bridge, 4 ELEMENTS BRIDGE, 4 ELEMENTS Bridge, 4 ELEMENTS Bridge, 4 ELEMENTS -
Diode component materials - - silicon SILICON silicon silicon -
Phase - - 1 1 1 1 -
Maximum repetitive peak reverse voltage - - 100 V 200 V 400 V 600 V -
Maximum non-repetitive peak forward current - - 50 A 50 A 50 A 50 A -

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