BZT55B...
Vishay Semiconductors
Silicon Epitaxial Planar Z–Diodes
Features
D
Very sharp reverse characteristic
D
Low reverse current level
D
Available with tighter tolerances
D
Very high stability
D
Low noise
D
V
Z
–tolerance
±
2%
Applications
D
Voltage stabilization
96 12009
Order Instruction
Type
BZT55B2V4
Ordering Code
BZT55B2V4–GS08
Remarks
Tape and Reel
Absolute Maximum Ratings
Tj = 25°C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Junction ambient
on PC board
50 mm x 50 mm x 1.6 mm
Test Conditions
R
thJA
x300K/W
Type
Symbol
P
V
I
Z
T
j
T
stg
R
thJA
Value
500
P
V
/V
Z
175
–65...+175
500
Unit
mW
mA
°C
°C
K/W
Electrical Characteristics
Tj = 25°C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Symbol
V
F
Min.
Typ.
Max.
1.5
Unit
V
Document Number 85637
Rev. 1, 22–May–02
www.vishay.com
1 (6)
BZT55B...
Vishay Semiconductors
Characteristics
(Tj = 25_C, unless otherwise specified)
600
P
tot
– Total Power Dissipation ( mW )
500
400
300
200
100
0
0
95 9602
TK
VZ
– Temperature Coefficient of V
Z
( 10
–4
/K )
15
10
5
I
Z
=5mA
0
–5
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
40
80
120
160
200
T
amb
– Ambient Temperature (
°C
)
95 9600
Figure 1. Total Power Dissipation vs.
Ambient Temperature
1000
D
V – Voltage Change ( mV )
Z
Figure 4. Temperature Coefficient of Vz vs. Z–Voltage
200
C
D
– Diode Capacitance ( pF )
T
j
=25°C
100
150
V
R
=2V
100
T
j
=25°C
I
Z
=5mA
10
50
1
0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 2. Typical Change of Working Voltage under
Operating Conditions at T
amb
=25°C
1.3
V
Ztn
– Relative Voltage Change
V
Ztn
=V
Zt
/V
Z
(25°C)
I
F
– Forward Current ( mA )
1.2
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
10
–4
/K
10
–4
/K
Figure 5. Diode Capacitance vs. Z–Voltage
100
10
T
j
=25°C
1
1.1
4
2
1.0
0.9
0.8
–60
0
–2 10
–4
/K
–4
10
–4
/K
0.1
0.01
0.001
0
60
120
180
240
95 9605
0
0.2
0.4
0.6
0.8
1.0
95 9599
T
j
– Junction Temperature (
°C
)
V
F
– Forward Voltage ( V )
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
Figure 6. Forward Current vs. Forward Voltage
Document Number 85637
Rev. 1, 22–May–02
www.vishay.com
3 (6)
BZT55B...
Vishay Semiconductors
100
r
Z
– Differential Z-Resistance (
W
)
1000
I
Z
– Z-Current ( mA )
80
P
tot
=500mW
T
amb
=25°C
60
I
Z
=1mA
100
5mA
10 10mA
40
20
0
0
4
8
12
16
20
1
0
95 9606
T
j
=25°C
5
10
15
20
25
95 9604
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 7. Z–Current vs. Z–Voltage
50
P
tot
=500mW
T
amb
=25°C
Figure 9. Differential Z–Resistance vs. Z–Voltage
I
Z
– Z-Current ( mA )
40
30
20
10
0
15
20
25
30
35
95 9607
V
Z
– Z-Voltage ( V )
Figure 8. Z–Current vs. Z–Voltage
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
t
p
/T=0.05
1
10
–1
10
0
10
1
t
p
– Pulse Length ( ms )
t
p
/T=0.02
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
DT/Z
thp
)
1/2
)/(2r
zj
)
10
2
t
p
/T=0.01
R
thJA
=300K/W
DT=T
jmax
–T
amb
95 9603
Figure 10. Thermal Response
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4 (6)
Document Number 85637
Rev. 1, 22–May–02
ARM Technology
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