SML20J175R3 datasheet, PDF - EEWORLD Datasheet

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SML20J175R3: Description175A, 200V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-227, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size197KB，3 Pages; ManufacturerSEMELAB; Environmental Compliance

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SML20J175R3 Overview

175A, 200V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-227, 4 PIN

SML20J175R3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMELAB
Parts packaging code	SOT-227
package instruction	FLANGE MOUNT, R-XUFM-X4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	3600 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	175 A
Maximum drain-source on-resistance	0.011 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XUFM-X4
JESD-609 code	e3
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	700 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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N-CHANNEL

POWER MOSFET

SML20J175

•

Fast Switching and Low leakage

100% Avalanche Tested

Popular SOT-227 Package

StarMOS is a new generation of high voltage N-Channel

enhancement mode power MOSFET’s. This new technology

minimises the JFET effect, increases packing density and reduces

the on-resistance. StarMOS also achieve faster switching speeds

through optimised gate layout.

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated)

VDS

VGS

IDM

RDS(on)

EAR

EAS

IAR

Tstg

Drain – Source Voltage

Gate – Source Voltage Continuous

Gate – Source Voltage Transient

Continuous Drain Current

Pulsed Drain Current

(1)

On-State Drain-Source Resistance

Total Power Dissipation

Derate Above 25°C

Repetitive Avalanche Energy

(1)

Single Pulse Avalanche Energy

(4)

Avalanche Current (Repetitive and Non-Repetitive)

(1)

Junction Temperature Range

Storage Temperature Range

Lead Temperature: 0.063” from Case for 10 sec

200V

±30V

175A

700A

0.011Ω

700W

5.6W/°C

30mJ

3600mJ

175A

-55 to +150°C

300°C

THERMAL / PACKAGE CHARACTERISTICS

Symbols

θJC

θJA

Visolation

Torque

Parameters

Thermal Resistance, Junction To Case

Thermal Resistance, Junction To Ambient

RMS Voltage (50-60Hz Sinusoidal waveform from terminals to

mounting base for 1min)

Device Mounting Screws and Electrical Terminations

Min.

Typ.

Max.

0.18

0.40

Units

°C/W

2500

1.4

Notes

(1) Repetitive Rating: Pulse width limited by maximum junction temperature

(2) Pulse Width

≤

380us,

δ ≤

(3) See MIL-STD-750 Method 3471

(4) Peak IL = 175A, L = 235μH, RG = 25Ω, Starting TJ = 25°C

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 8590

Issue 1

Page 1 of 3

Website:

http://www.semelab-tt.com

SML20J175R3 Related Products

	SML20J175R3
Description	175A, 200V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-227, 4 PIN
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMELAB
Parts packaging code	SOT-227
package instruction	FLANGE MOUNT, R-XUFM-X4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	3600 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	175 A
Maximum drain-source on-resistance	0.011 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XUFM-X4
JESD-609 code	e3
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	700 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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