BSS89RLRA datasheet, PDF - EEWORLD Datasheet

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BSS89RLRA: Description400mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92; CategoryDiscrete semiconductor The transistor; File Size32KB，1 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BSS89RLRA Overview

400mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

BSS89RLRA Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	0.4 A
Maximum drain-source on-resistance	6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	3.5 pF
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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BSS89RLRA Related Products

	BSS89RLRA	BSS89RL	BSS89ZL1	BSS89RLRF	BSS89RLRM	BSS89RLRP	BSS89RL1	BSS89RLRB	BSS89RLRE
Description	400mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92	Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	400mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92	Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	400mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V	200 V	200 V	200 V	200 V	200 V	200 V	200 V
Maximum drain current (ID)	0.4 A	0.4 A	0.4 A	0.4 A	0.4 A	0.4 A	0.4 A	0.4 A	0.4 A
Maximum drain-source on-resistance	6 Ω	6 Ω	6 Ω	6 Ω	6 Ω	6 Ω	6 Ω	6 Ω	6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	3.5 pF	3.5 pF	3.5 pF	3.5 pF	3.5 pF	3.5 pF	3.5 pF	3.5 pF	3.5 pF
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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