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2SD427R

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size206KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SD427R Overview

Transistor

2SD427R Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
2SD427
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 120V(Min)
·High
Power Dissipation-
: P
C
= 80W(Max)@T
C
=25℃
·Complement
to Type 2SB557
APPLICATIONS
·Designed
for power amplifier applications.
·Recommended
for 50W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
120
UNIT
V
120
5
V
V
8
-8
80
150
-65~150
A
A
W
Collector Current-Continuous
Emitter Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature
isc Website:www.iscsemi.cn

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Reach Compliance Code unknow unknow
Base Number Matches 1 1
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