INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
2SD427
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 120V(Min)
·High
Power Dissipation-
: P
C
= 80W(Max)@T
C
=25℃
·Complement
to Type 2SB557
APPLICATIONS
·Designed
for power amplifier applications.
·Recommended
for 50W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
120
UNIT
V
120
5
V
V
8
-8
80
150
-65~150
A
A
W
℃
℃
Collector Current-Continuous
Emitter Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CE
(sat)
V
BE
(on)
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Output Capacitance
CONDITIONS
I
C
= 0.1A; I
B
= 0
I
E
= 10mA; I
C
= 0
I
C
= 5A; I
B
= 0.5A
B
2SD427
MIN
120
5
TYP.
MAX
UNIT
V
V
2.5
2.0
0.1
V
V
mA
mA
I
C
= 5A; V
CE
= 5V
V
CB
= 60V; I
E
= 0
V
EB
= 5V; I
C
= 0
I
C
= 1A; V
CE
= 5V
Current-Gain—Bandwidth Product
h
FE-1
Classifications
R
40-80
O
70-140
w
em
cs
.is
w
w
I
C
= 5A; V
CE
= 5V
I
E
= 0; V
CB
= 10V; f= 1MHz
I
C
= 1A; V
CE
= 5V
.cn
i
40
20
170
5
0.1
140
pF
MHz
isc Website：www.iscsemi.cn
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