UNISONIC TECHNOLOGIES CO., LTD
2SB824
PNP PLANAR SILICON
TRANSISTOR
FEATURES
* Low collector-to-emitter saturation voltage:
V
CE(SAT)
=-0.4V max/I
C
=-3A, I
B
=-0.3A
1
PNP SILICON TRANSISTOR
1
SOT-89
TO-251
1
TO-126
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SB824L-x-AB3-R
2SB824G-x-AB3-R
2SB824L-x-T60-K
2SB824G-x-T60-K
2SB824L-x-TM3-T
2SB824G-x-TM3-T
Package
SOT-89
TO-126
TO-251
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tape Reel
Bulk
Tube
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Copyright © 2012 Unisonic Technologies Co., Ltd
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2SB824
ABSOLUTE MAXIMUM RATINGS
(T
A
=25℃)
PNP SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
V
CBO
-60
V
Collector to Emitter Voltage
V
CEO
-50
V
Emitter to Base Voltage
V
EBO
-6
V
Collector Current
I
C
-5
A
Collector Current (Pulse)
I
CP
-9
A
SOT-89
0.5
Collector Dissipation
P
C
W
TO-126/ TO-251
1
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-40 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25℃)
PARAMETER
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Turn-ON Time
Storage Time
Fall Time
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
f
T
C
OB
V
CE(SAT)
t
ON
t
STG
t
F
TEST CONDITIONS
I
C
=-1mA, I
E
=0
I
C
=-1mA, R
BE
=∞
I
C
=0, I
E
=-1mA
V
CB
=-40V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-2V, I
C
=-1A
V
CE
=-2V, I
C
=-3A
V
CE
=-5V, I
C
=-1A
V
CB
=-10V, f=1MHz
I
C
=-3A, I
B
=-0.3A
See specified test circuit
See specified test circuit
See specified test circuit
MIN
-60
-50
-6
TYP
MAX
UNIT
V
V
V
mA
mA
70
30
30
100
-0.1
-0.1
360
-0.4
0.1
1.4
0.2
MHZ
pF
V
μs
μs
μs
CLASSIFICATION of h
FE1
RANK
RANGE
Q
70-140
R
100-200
S
180-360
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QW-R208-042.C
2SB824
SWITCHING TIME TEST CIRCUIT
PNP SILICON TRANSISTOR
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2SB824
TYPICAL CHARACTERISTICS
mA A
A
00 350m 0mA50m
-4 - 30 -2
PNP SILICON TRANSISTOR
Collector Current, -I
C
(A)
-500
mA
Collector Current, -I
C
(A)
T
A
=8
0
25
0
=8
T
A
10
5
3
2
Collector-Emitter Saturation Voltage vs.
Collector Current
I
C
/I
B
=20
Collector-Emitter Saturation Voltage,
-V
CE (SAT)
(V)
DC Current Gain, h
FE
10
7
5
3
2
Base-Emitter Saturation Voltage vs.
Collector Current
1.0
5
3
2
T
A
=8
0
0.1
5
3
2
-20
25
1.0
7
5
3
I
C
/I
B
=10
I
C
/I
B
=20
0.01
2
3
5
0.1
1.0
Collector Current, -I
C
(A)
2
3
5
2
3
5
10
2
2
2
3
5
0.1
1.0
Collector Current, -I
C
(A)
2
3
5
-20
2
3
5
10
2
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2SB824
TYPICAL CHARACTERISTICS(Cont.)
2
PNP SILICON TRANSISTOR
ASO
I
CP
I
C
10
0m
s
s
1m
ms
10
10000
Transition frequency, f
T
(MHz)
3000
1000
300
100
30
10
3
Transition Frequency vs. Collector Current
V
CE
=-5V
f=1MHz
T
C
=25℃
10
Collector Current , -I
C
(A)
7
5
3
2
DC
Op
1.0
7
5
3
2
er a
ti o
n
0.1
(Single pulse with
regard to 1 ~ 100ms)
1.0
10
100
Collector-to-Emitter Voltage, -V
CE
(V)
7
2
3
5
7
2
3
5
7
5
1
0.01 0.03
0.1
0.3
1
3
Collector Current, -I
C
(A)
10
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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