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BAY80133

Description
DIODE 0.25 A, 150 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size109KB,4 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BAY80133 Overview

DIODE 0.25 A, 150 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode

BAY80133 Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.07 V
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current9 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.25 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage150 V
Maximum reverse current0.1 µA
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

BAY80133 Related Products

BAY80133 BAY80113 BAY80153 BAY80143 BAY80136 BAY80116
Description DIODE 0.25 A, 150 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode DIODE 0.25 A, 150 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode DIODE 0.25 A, 150 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode DIODE 0.25 A, 150 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode DIODE 0.25 A, 150 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode DIODE 0.25 A, 150 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
Maker NXP NXP NXP NXP NXP NXP
package instruction O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.07 V 1.07 V 1.07 V 1.07 V 1.07 V 1.07 V
JEDEC-95 code DO-35 DO-35 DO-35 DO-35 DO-35 DO-35
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Maximum non-repetitive peak forward current 9 A 9 A 9 A 9 A 9 A 9 A
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum output current 0.25 A 0.25 A 0.25 A 0.25 A 0.25 A 0.25 A
Package body material GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum power dissipation 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 150 V 150 V 150 V 150 V 150 V 150 V
Maximum reverse current 0.1 µA 0.1 µA 0.1 µA 0.1 µA 0.1 µA 0.1 µA
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
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