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DUL1504-GG

Description
Rectifier Diode, 1 Phase, 1 Element, 15A, 400V V(RRM), Gallium Arsenide, 3.1 X 3.1 MM, DIE-2
CategoryDiscrete semiconductor    diode   
File Size482KB,7 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric Compare View All

DUL1504-GG Overview

Rectifier Diode, 1 Phase, 1 Element, 15A, 400V V(RRM), Gallium Arsenide, 3.1 X 3.1 MM, DIE-2

DUL1504-GG Parametric

Parameter NameAttribute value
MakerMicross
Parts packaging codeDIE
package instruction3.1 X 3.1 MM, DIE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsGALLIUM ARSENIDE
Diode typeRECTIFIER DIODE
JESD-30 codeS-XUUC-N2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature260 °C
Minimum operating temperature-65 °C
Maximum output current15 A
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.075 µs
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
August 2009
DUL1504 – 400V, 15A
HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE
General Description
The DUL1504 is a GaAs P-I-N Rectifier. It uses a
patented liquid phase epitaxy (LPE) construction
to provide temperature performance above current
Silicon, Silicon Carbide and Gallium Nitride
products of a similar specification. The device is
able to function stably well above the maximum T
J
of more traditional diodes of this type while
maintaining parity of performance in terms of key
parameters such as recovery time and forward
voltage.
Preliminary
Features
High maximum junction temperature; up to
+260° vs. +175° for silicon diodes
C
C
Lower and
temperature independent
dynamic recovery characteristics over the
full specified temperature range
Lower leakage current at all operating
temperatures
Very low capacitance
Package Types
Applications
High temperature electronics
Power Modules
Hybrid circuits
TO-257
TO-276AB (SMD)
BARE DIE
Thermal Characteristics
SYMBOL
PARAMETER
PACKAGE
RATINGS
UNITS
R
θJC
MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE
TO-276Al
3.51
°
C/W
R
θJC
MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE
TO-257AlN
1.45
°
C/W
R
θJC
MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE
TO-276AB
1.24
°
C/W
TO-257Al / TO-257AlN
TO-276AB
BARE DIE (3.1mm²)
1
1
ORDERING
PART #
PACKAGE
TEMP RANGE
1 2 3
1.
2.
3.
2
3
1.
2.
CATHODE
ANODE
(DIE BACKSIDE)
DUL1504AL
DUL1504ALN
DUL1504S
DUL1504-AG
DUL1504-GG
TO-257Al
TO-257AlN
TO-276AB
BARE DIE
BARE DIE
-65 TO 260°
C
-65 TO 260°
C
-65 TO 260°
C
-65 TO 260°
C
-65 TO 260°
C
ANODE
COMMON CATHODE
COMMON CATHODE
1
2
3
CATHODE
ANODE
CATHODE
Europe:
sales@mintech.co.uk
USA :
ussales@mintech.co.uk
China:
chinasales@mintech.co.uk
Rev. 1.4 7
TH
August 2009
1
© Mintech Semiconductors Ltd
www.mintech.co.uk

DUL1504-GG Related Products

DUL1504-GG DUL1504-AG DUL1504AL DUL1504S DUL1504ALN
Description Rectifier Diode, 1 Phase, 1 Element, 15A, 400V V(RRM), Gallium Arsenide, 3.1 X 3.1 MM, DIE-2 Rectifier Diode, 1 Phase, 1 Element, 15A, 400V V(RRM), Gallium Arsenide, 3.1 X 3.1 MM, DIE-2 Rectifier Diode, 1 Phase, 1 Element, 15A, 400V V(RRM), Gallium Arsenide, TO-257AA, TO-257AL, 3 PIN Rectifier Diode, 1 Phase, 1 Element, 15A, 400V V(RRM), Gallium Arsenide, TO-276AB, SMD-3 Rectifier Diode, 1 Phase, 1 Element, 15A, 400V V(RRM), Gallium Arsenide, TO-257AA, TO-257ALN, 3 PIN
Maker Micross Micross Micross Micross Micross
Parts packaging code DIE DIE TO-257AA TO-276AB TO-257AA
package instruction 3.1 X 3.1 MM, DIE-2 3.1 X 3.1 MM, DIE-2 R-XSFM-P3 R-XBCC-N3 R-XSFM-P3
Contacts 2 2 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code S-XUUC-N2 S-XUUC-N2 R-XSFM-P3 R-XBCC-N3 R-XSFM-P3
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A
Number of components 1 1 1 1 1
Phase 1 1 1 1 1
Number of terminals 2 2 3 3 3
Maximum operating temperature 260 °C 260 °C 260 °C 260 °C 260 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 15 A 15 A 15 A 15 A 15 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape SQUARE SQUARE RECTANGULAR RECTANGULAR RECTANGULAR
Package form UNCASED CHIP UNCASED CHIP FLANGE MOUNT CHIP CARRIER FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 400 V 400 V 400 V 400 V 400 V
Maximum reverse recovery time 0.075 µs 0.075 µs 0.075 µs 0.075 µs 0.075 µs
surface mount YES YES NO YES NO
Terminal form NO LEAD NO LEAD PIN/PEG NO LEAD PIN/PEG
Terminal location UPPER UPPER SINGLE BOTTOM SINGLE
JEDEC-95 code - - TO-257AA TO-276AB TO-257AA
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