LS3250 SERIES
MONOLITHIC DUAL
NPN TRANSISTORS
*FEATURES
6 LEAD SOT-23 SURFACE MOUNT PACKAGE*
TIGHT MATCHING
1
1
2mV
3µV/°C
2
*
SOT-23
TOP VIEW
TO-78
TOP VIEW
EXCELLENT THERMAL TRACKING
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Collector Current
Maximum Voltages
Collector to Collector Voltage
B1
E2
B2
1
2
3
6
5
4
C1
E1
C2
E2
5
6
3
2
E1
B2
C2
B1
C1
7
1
-55 to +150 °C
-55 to +150 °C
TBD
50mA
50V
E2
TO-71
TOP VIEW
5
6
PDIP
SOIC
8
7
6
5
3
2
E1
C1
1
2
3
4
C2
C1
B2
B1
E2
E1
NC
NC
1
2
3
4
8
7
6
5
C2
B2
E2
NC
B2
C2
B1
C1
B1
E1
7
1
NC
MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
Base to Emitter Voltage Differential
Base to Emitter Voltage Differential
Change with Temperature
Base Current Differential
Base Current Differential
Change with Temperature
Current Gain Differential
LS3250A
MIN
MAX
2
3
10
0.5
10
LS3250B
MIN
MAX
5
5
10
0.5
10
LS3250C
MIN
MAX
10
15
10
1.0
15
UNIT
mV
µV/°C
nA
nA/°C
%
CONDITIONS
I
C
= 10µA , V
CE
= 5V
I
C
= 10µA , V
CE
= 5V
T
A
= -40°C to +85°C
I
C
= 10µA, V
CE
= 5V
I
C
= 10µA, V
CE
= 5V
T
A
= -40°C to +85°C
I
C
= 1mA, V
CE
= 5V
V
BE1
−
V
BE2
V
BE1
−
V
BE2
ΔT
I
B1
−
I
B2
I
B1
−
I
B2
ΔT
h
FE1
h
FE2
ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYMBOL
BV
CBO
BV
CEO
BV
CCO
BV
EBO
V
CE(SAT)
CHARACTERISTIC
Collector to Base Breakdown Voltage
LS3250A
MIN
45
MAX
LS3250B
MIN
40
40
±50
6.0
0.35
0.35
MAX
LS3250C
MIN
20
20
±50
6.0
1.2
V
MAX
UNIT
CONDITIONS
I
C
= 10µA , I
E
= 0A
I
C
= 10mA, I
B
= 0
I
C
= ±1µA, I
E
= I
B
= 0A
I
E
= 10µA, I
C
= 0A
I
C
= 10mA, I
B
= 1mA
Collector to Emitter Breakdown Voltage 45
Collector to Collector Breakdown
±50
Voltage
3
Emitter to Base Breakdown Voltage
6.0
Collector to Emitter Saturation Voltage
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
1/31/12 Rev#A4 ECN# LS 3250
ELECTRICAL CHARACTERISTICS CONT. @25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
LS3250A
MIN
150
h
FE
DC Current Gain
150
125
I
CBO
I
EBO
I
C1C2
C
OBO
f
T
NF
Collector Cutoff Current
Emitter Cutoff Current
Collector to Collector Leakage Current
Output Capacitance
Gain Bandwidth Product (Current)
Noise Figure (Narrow Band)
0.35
0.35
±1
2
600
3
650
MAX
LS3250B
MIN
100
80
60
0.35
0.2
0.35
±1
2
600
3
0.35
±1
2
600
3
µA
pF
MHz
dB
nA
MAX
LS3250C
MIN
50
40
30
MAX
UNIT
CONDITIONS
I
C
= 1mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
I
C
= 35mA, V
CE
= 5V
I
E
= 0A, V
CB
= 30V
I
E
= 0A, V
CB
= 20V
I
E
= 0A, V
CB
= 3V
V
CC
= ±50V, I
E
= I
B
= 0A
I
E
= 0A, V
CB
= 10V
I
C
= 1mA, V
CE
= 5V
I
C
= 100µA, V
CE
= 5V
BW = 200Hz
R
B
= 10Ω,
f
= 1kHz
SOT-23
0.95
PDIP
0.060
1
2
2.80
3.00
8
7
0.100
1
1.90
6
5
0.35
0.50
0.375
*
2
0.210
0.170
0.038
3
4
6
5
3
1.50
1.75
2.60
3.00
4
0.250
0.90
1.30
0.145
0.170
0.09
0.20
0.295
0.320
DIMENSIONS IN
INCHES
0.00
0.15
0.10
0.60
DIMENSIONS IN
MILLIMETERS
SOIC
0.014
0.018
1
2
0.021
8
7
0.050
0.189
0.196
3
4
6
5
* Standard package is SOT23 6 lead.
Other packages listed are optional. Contact factory regarding
availability of optional packages.
0.150
0.157
0.0040
0.0098
0.2284
0.2440
DIMENSIONS IN
INCHES
0.0075
0.0098
NOTES:
1.
2.
3.
Maximum rating for LS3250A, SOT23-6.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
The reverse Base to Emitter voltage must never exceed 6.0 Volts. The reverse Base to Emitter current must never exceed 10µA.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
1/31/12 Rev#A4 ECN# LS 3250
京公网安备 11010802033920号
EEWORLD
