JMnic
Product Specification
Silicon PNP Power Transistors
2SB546A
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD401A
・Collector
current I
C
=-2A
・Collector-base
voltage V
CBO
=-200V
APPLICATIONS
・For
use in general purpose power
amplifier,vertical output application
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
・
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-200
-150
-5
-2
-3
30
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-10mA; I
B
=0
I
C
=-0.5mA; I
E
=0
I
E
=-0.5mA; I
B
=0
I
C
=-500m A;I
B
=-50m A
V
CB
=-150V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.4A ; V
CE
=-10V
I
C
=-0.4A ; V
CE
=-10V
40
5
MIN
-150
-200
-5
2SB546A
TYP.
MAX
UNIT
V
V
V
-1.0
-50
-50
240
V
μA
μA
MHz
h
FE
classifications
M
40-80
L
60-120
K
100-200
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB546A
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB546A
4
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