Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| package instruction | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.1 A |
| Collector-based maximum capacity | 10 pF |
| Collector-emitter maximum voltage | 25 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 90 |
| JEDEC-95 code | TO-92 |
| JESD-30 code | O-PBCY-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.36 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 100 MHz |
| Base Number Matches | 1 |
| 2N2923 | 2N3414 | 2N2926 | 2N3394 | 2N2714 | 2N3398 | 2N3391 | 2N2925 | |
|---|---|---|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.1A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.1A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | conform to | incompatible | incompatible | conform to | conform to | incompatible | incompatible |
| package instruction | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | compli | compli | compli | compli | compli | compli | compli | compli |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.1 A | 0.5 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| Collector-emitter maximum voltage | 25 V | 25 V | 18 V | 25 V | 18 V | 25 V | 25 V | 25 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 90 | 75 | 35 | 55 | 75 | 55 | 250 | 235 |
| JEDEC-95 code | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
| JESD-30 code | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 160 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 0.36 W | 0.36 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.2 W | 0.8 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Collector-based maximum capacity | 10 pF | - | 10 pF | 10 pF | - | 10 pF | 10 pF | 10 pF |
| JESD-609 code | e0 | - | e0 | e0 | - | - | e0 | e0 |
| Terminal surface | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
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