JMnic
Product Specification
Silicon PNP Power Transistors
2SB566 2SB566A
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD476/476A
APPLICATIONS
・For
low frequency power amplifier
power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
・
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SB566
V
CEO
Collector-emitter voltage
2SB566A
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Collectorl power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-60
-5
-4
-8
40
150
-55~150
V
A
A
W
℃
℃
CONDITIONS
Open emitter
VALUE
-70
-50
V
UNIT
V
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CBO
PARAMETER
Collector-base breakdown voltage
2SB566
I
C
=-50mA; R
BE
=∞
2SB566A
I
E
=-10μA; I
C
=0
I
C
=-2 A;I
B
=-0.2 A
I
C
=-2 A;I
B
=-0.2 A
V
CB
=-50V; I
E
=0
I
C
=-0.1A ; V
CE
=-4V
I
C
=-1A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-4V
CONDITIONS
I
C
=-10μA ; I
E
=0
2SB566 2SB566A
MIN
-70
-50
TYP.
MAX
UNIT
V
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-60
-5
-1.0
-1.2
-1
35
60
15
200
MHz
V
V
V
μA
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE-1
h
FE-2
f
T
Emitter-base breakdown votage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
DC current gain
DC current gain
Transition frequency
Switching times
t
on
t
off
t
stg
Turn-on time
Turn-off time
Storage time
I
C
=-0.5A ; V
CC
=-10.5V
I
B1
=-I
B2
=-0.05 A
0.3
3.0
2.5
μs
μs
μs
h
FE-2
classifications
B
60-120
C
100-200
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB566 2SB566A
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB566 2SB566A
4
MCU
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