JMnic
Product Specification
Silicon PNP Power Transistors
2SB707 2SB708
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD568/569
APPLICATIONS
・For
low frequency power amplifier
low speed switching industrial use
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SB707
V
CEO
Collector-emitter voltage
2SB708
V
EBO
I
C
I
CM
I
B
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
40
150
-55~150
℃
℃
Open collector
Open base
-80
-7
-7
-15
-3.5
1.5
W
V
A
A
A
CONDITIONS
Open emitter
VALUE
-80
-60
V
UNIT
V
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SB707 2SB708
MIN
TYP.
MAX
UNIT
2SB707
V
(BR)CEO
Collector-emitter
breakdown voltage
2SB708
I
C
=-10mA; I
B
=0
-60
V
-80
V
CEsat
Collector-emitter saturation voltage
I
C
=-5A;I
B
=-0.5 A
-0.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=-5A;I
B
=-0.5 A
-1.5
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=-60V; I
E
=0
-10
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-10
h
FE-1
DC current gain
I
C
=-3A ; V
CE
=-1V
40
200
h
FE-2
DC current gain
I
C
=-5A ; V
CE
=-1V
20
h
FE-2
classifications
R
40-80
O
60-120
Y
100-200
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB707 2SB708
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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