JMnic
Product Specification
Silicon PNP Power Transistors
2SB713
DESCRIPTION
・With
TO-3PN package
・Wide
area of safe operation
・Excellent
good linearity of h
FE
APPLICATIONS
・For
high power amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-200
-140
-5
-9
-15
100
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB713
MAX
UNIT
V
CEsat
Collector-emitter saturation voltage
I
C
=-7A; I
B
=-0.7A
-2.0
V
V
BE
Base-emitter on voltage
I
C
=-7A;V
CE
=-5V
-1.8
V
μA
I
CBO
Collector cut-off current
V
CB
=-140V; I
E
=0
-50
I
EBO
Emitter cut-off current
V
EB
=-3V; I
C
=0
-50
μA
h
FE-1
DC current gain
I
C
=-20mA ; V
CE
=-5V
20
h
FE-2
DC current gain
I
C
=-1A ; V
CE
=-5V
40
200
h
FE-3
DC current gain
I
C
=-7A ; V
CE
=-5V
15
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-5V
7
MHz
C
OB
Collector output capacitance
f=1MHz;V
CB
=-10V
220
pF
h
FE-2
Classifications
R
40-80
Q
60-120
P
100-200
2
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